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半橋式驅動器

LMG1205

現行

適用於 GaNFET 和 MOSFET 且具有 5-V UVLO 的 1.2-A、5-A 90-V、半橋閘極驅動器

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產品規格表

LMG1205

現行
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產品詳細資料

Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.09 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.09 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
DSBGA (YFX) 12 3.24 mm² (— mm × — mm)
  • Independent high-side and low-side TTL logic inputs
  • 1.2-A peak source, 5-A sink current
  • High-side floating bias voltage rail operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable turnon, turnoff strength
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance
  • Fast propagation times (35 ns typical)
  • Excellent propagation delay matching (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side TTL logic inputs
  • 1.2-A peak source, 5-A sink current
  • High-side floating bias voltage rail operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable turnon, turnoff strength
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance
  • Fast propagation times (35 ns typical)
  • Excellent propagation delay matching (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.
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LMG1210 現行 適用 GaNFET 和 MOSFET 的 1.5-A、3-A、200-V 半橋閘極驅動器、5-V UVLO 和可編程失效時間 This product offers superior switching performance (10-ns prop delay, 1-ns delay matching), resistor-programmable deadtime, an internal LDO, and 300-V/ns CMTI.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode datasheet (Rev. B) PDF | HTML 2023/4/14
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 2023/11/15
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
Application brief GaN Applications PDF | HTML 2022/8/10
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 2022/8/10
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022/8/4
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022/8/4
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022/8/2
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
應用說明 GaN Gate Driver Layout Help 2019/5/23
白皮書 Optimizing multi-megahertz GaN driver design white paper (Rev. A) 2018/11/27
白皮書 A comprehensive methodology to qualify the reliability of GaN products 2015/3/2

設計與開發

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開發板

LMG1205HBEVM — LMG1205 GaN 功率級評估模組

80V 10A 功率級 EVM - LMG1205 半橋 EVM 電路板是小型且易用的功率級，具外部 PWM 訊號。此 EVM 適用於評估許多不同 DC-DC 轉換器拓撲中 LMG1205 驅動 GaN 半橋的性能。可用於評估半橋的性能以測量效率。此模組可提供最大電流為 10A。然而，應遵循適當的散熱管理（強制通風、低頻率運作等），以確保不超過板載元件的最高操作溫度規格。EVM 屬於開迴路電路板，不適合進行瞬態量測。

使用指南: PDF
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模擬型號

LMG1205 PSpice Transient Model (Rev. A)

SNOM624A.ZIP (35 KB) - PSpice 模型
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模擬型號

LMG1205 TINA-TI Reference Design (Rev. A)

SNOM622A.TSC (131 KB) - TINA-TI 參考設計
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模擬型號

LMG1205 TINA-TI Transient Spice Model (Rev. A)

SNOM621A.ZIP (9 KB) - TINA-TI Spice 模型
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計算工具

SNOR034 — LMG1205 Component Design Calculator and Schematic Review

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DSBGA (YFX) 12 Ultra Librarian
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