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低壓側驅動器

LMG1020

現行

適用於奈秒輸入脈衝且具有 5-V UVLO 的 7-A/5-A 單通道閘極驅動器

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產品規格表

LMG1020

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
DSBGA (YFF) 6 1.4000000000000001 mm² (— mm × — mm)
  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8 mm × 1.2 mm WCSP Package
  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8 mm × 1.2 mm WCSP Package

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

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LMG1025-Q1 現行 適用於窄脈衝應用、具有 5V UVLO 的車用 7A/5A 單通道低壓側驅動器 Similar electrical characteristics in a different package offering and automotive grade

技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width Applications datasheet (Rev. B) PDF | HTML 2018/10/16
應用說明 Increasing Precision in LiDAR and Laser Scanner Applications With Discrete Non-Isolated GaN Gate Drivers PDF | HTML 2026/1/21
應用說明 Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024/1/22
應用說明 Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 2023/9/8
Application brief GaN Applications PDF | HTML 2022/8/10
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 2022/8/10
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022/8/4
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022/8/4
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022/8/2
應用說明 Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021/11/10
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
電子書 E-book: An engineer’s guide to industrial robot designs 2020/2/12
應用說明 GaN Gate Driver Layout Help 2019/5/23
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019/1/18
技術文章 5 ways TI’s tiny devices deliver huge innovations to engineers PDF | HTML 2018/11/8
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018/3/16
技術文章 GaN drivers – switching faster than today’s technology PDF | HTML 2018/3/5
白皮書 A comprehensive methodology to qualify the reliability of GaN products 2015/3/2

設計與開發

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開發板

LMG1020EVM-006 — LMG1020 GaN 低壓側驅動器 + GaN FET 光達評估模組

LMG1020EVM-006 是一款小型又容易使用的功率級產品，且具有 LIDAR 雷射驅動。EVM 包括整合式電阻負載（不包括雷射），並採用可緩衝（並進一步縮短）或直接傳遞至功率級的短脈衝輸入。電路板可展示用於高解析度 LIDAR 和 ToF 系統的奈秒雷射脈衝。
使用指南: PDF | HTML
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模擬型號

LMG1020 PSpice Transient Model (Rev. C)

SNOM618C.ZIP (1575 KB) - PSpice 模型
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模擬型號

LMG1020 TINA-TI Reference Design (Rev. A)

SNOM619A.TSC (66 KB) - TINA-TI 參考設計
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模擬型號

LMG1020 TINA-TI Transient Spice Model (Rev. A)

SNOM620A.ZIP (43 KB) - TINA-TI Spice 模型
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計算工具

SLURB17 — LMG1020 Schematic Review Template

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參考設計

TIDA-01573 — 適用於 LiDAR 的納秒雷射驅動器參考設計

此光距及測距 (LiDAR) 參考設計展現了 LMG1020 和 LMG1025-Q1 低壓側閘極驅動器，適合窄脈衝應用。這些裝置可驅動 FET，產生 < 1.5-ns 雷射光學脈衝（功率超過 100W）。
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
DSBGA (YFF) 6 Ultra Librarian
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