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LMG1025-Q1

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產品規格表

LMG1025-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
Number of channels 1 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
WSON (DEE) 6 4 mm² (2 mm × 2 mm) WSON (DRV) 6 4 mm² (2 mm × 2 mm)
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications datasheet (Rev. C) PDF | HTML 2024/12/6
應用說明 TLV3602 ToF LiDAR Transmitter Application Design Guide PDF | HTML 2026/7/15
應用說明 Increasing Precision in LiDAR and Laser Scanner Applications With Discrete Non-Isolated GaN Gate Drivers PDF | HTML 2026/1/21
應用說明 Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024/1/22
應用說明 Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 2023/9/8
Application brief GaN Applications PDF | HTML 2022/8/10
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 2022/8/10
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022/8/4
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022/8/4
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022/8/2
功能安全資訊 LMG1025-Q1 FIT, FMD, and Pin FMA PDF | HTML 2022/6/24
應用說明 Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021/11/10
證書 LMG1025-Q1EVM EU Declaration of Conformity (DoC) (Rev. A) 2020/9/16
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
應用說明 GaN Gate Driver Layout Help 2019/5/23
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019/1/18
Application brief Enable Function with Unused Differential Input 2018/7/11
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018/3/16
白皮書 A comprehensive methodology to qualify the reliability of GaN products 2015/3/2

設計與開發

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開發板

LMG1020EVM-006 — LMG1020 GaN 低壓側驅動器 + GaN FET 光達評估模組

LMG1020EVM-006 是一款小型又容易使用的功率級產品，且具有 LIDAR 雷射驅動。EVM 包括整合式電阻負載（不包括雷射），並採用可緩衝（並進一步縮短）或直接傳遞至功率級的短脈衝輸入。電路板可展示用於高解析度 LIDAR 和 ToF 系統的奈秒雷射脈衝。
使用指南: PDF | HTML
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開發板

LMG1025-Q1EVM — LMG1025-Q1 GaN 低側驅動器和 GaN FET LiDAR 評估模組

LMG1025-Q1EVM 是一款小型又容易使用的功率級，具有整合式電阻負載（不包括雷射）。它採用短脈衝輸入，可加以緩衝（並進一步短路），或直接傳送到功率級。
使用指南: PDF
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模擬型號

LMG1020 PSpice Transient Model (Rev. C)

SNOM618C.ZIP (1575 KB) - PSpice 模型
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模擬型號

LMG1020 TINA-TI Transient Spice Model (Rev. A)

SNOM620A.ZIP (43 KB) - TINA-TI Spice 模型
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計算工具

SLURB15 — LMG1025-Q1 Schematic Review Template

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參考設計

TIDA-01573 — 適用於 LiDAR 的納秒雷射驅動器參考設計

此光距及測距 (LiDAR) 參考設計展現了 LMG1020 和 LMG1025-Q1 低壓側閘極驅動器，適合窄脈衝應用。這些裝置可驅動 FET，產生 < 1.5-ns 雷射光學脈衝（功率超過 100W）。
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
WSON (DEE) 6 Ultra Librarian
WSON (DRV) 6 Ultra Librarian
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