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半橋式驅動器

LM5113-Q1

現行

適用 GaNFET 的車用 1.2-A/5-A, 100-V 半橋閘極驅動器

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產品規格表

LM5113-Q1

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 100 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 100 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
WSON (DPR) 10 16 mm² (4 mm × 4 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM5113-Q1 Automotive 90-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. B) PDF | HTML 2018/3/12
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
應用說明 Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 2023/11/15
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
Application brief GaN Applications PDF | HTML 2022/8/10
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 2022/8/10
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022/8/4
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022/8/4
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022/8/2
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
應用說明 GaN Gate Driver Layout Help 2019/5/23
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
白皮書 A comprehensive methodology to qualify the reliability of GaN products 2015/3/2

設計與開發

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開發板

LM5113LLPEVB — 用於強化模式 GaN FET 的 LM5113 100V、1.2A/5A 半橋閘極驅動器評估模組

LM5113 評估板旨在為設計工程師提供同步降壓轉換器，以評估 LM5113 這款 100V 半橋強化模式氮化鎵 (GaN) FET 驅動器。主動箝位電壓模式控制器 LM5025 用於產生降壓開關與同步開關的 PWM 訊號。

使用指南: PDF | HTML
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模擬型號

LM5113 PSpice Transient Model (Rev. D)

SNVM043D.ZIP (43 KB) - PSpice 模型
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模擬型號

LM5113 TINA-TI Transient Reference Design (Rev. A)

SNVM460A.TSC (613 KB) - TINA-TI 參考設計
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模擬型號

LM5113 TINA-TI Transient Spice Model (Rev. A)

SNVM459A.ZIP (16 KB) - TINA-TI Spice 模型
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模擬型號

LM5113 Unencrypted Spice Transient Model (Rev. B)

SNVJ002B.ZIP (2 KB) - PSpice 模型
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計算工具

SNVR523 — LM5113(-Q1) Component Design Calculator and Schematic Review

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