LM5112
- LM5112-Q1 is Qualified for Automotive Applications
- AEC-Q100 Grade 1 Qualified
- Manufactured on an Automotive Grade Flow
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7-A Sink and 3-A Source Current
- Fast Propagation Times: 25 ns (Typical)
- Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load - Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
- Supply Rail Undervoltage Lockout Protection
- Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation - Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package - Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver datasheet (Rev. C) | PDF | HTML | 2015/10/22 | ||
| 應用說明 | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024/1/22 | |||
| 應用說明 | Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) | PDF | HTML | 2023/9/8 | |||
| 應用說明 | Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver | PDF | HTML | 2021/11/10 | |||
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/2/28 | ||||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/2/28 | ||||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019/1/18 | ||||
| 更多文件說明 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018/10/29 | ||||
| 選擇指南 | Power Management Guide 2018 (Rev. R) | 2018/6/25 | ||||
| Application brief | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018/3/16 | ||||
| 應用說明 | An Alternative Approach to Higher-Power Boost Converters | 2009/11/30 |
設計與開發
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UCC27423-4-5-Q1EVM — 具有啟用功能的 UCC2742xQ1 雙路 4A 高速低壓側 MOSFET 驅動器評估模組
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (NGG) | 6 | Ultra Librarian |
| HVSSOP (DGN) | 8 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。