產品詳細資料

Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 0.0022 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 0.0022 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
VQFN-FCRLF (VBN) 18 31.5 mm² (7 mm × 4.5 mm)
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 60Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 60Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.

The DRV7167A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

The DRV7167A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 DRV7167A 100-V , 60A Half-Bridge GaN Motor Driver Power Stage datasheet (Rev. A) PDF | HTML 2026/7/24
Application brief 人形機器人的馬達控制 PDF | HTML PDF | HTML 2026/6/5

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參考設計

TIDA-010979 — 具有工業通訊參考設計的 48V 1kW 機器人關節馬達控制

此參考設計採用 TI Sitara™ MCU- AM261x 裝置處理工業乙太網路連線馬達驅動。此設計使用直徑 70mm 的印刷電路板 (PCB) 以驅動人形機器人關節(48V,1kW Eyoubot 馬達)。此設計展示了精巧的外形和簡化的整合平台。此平台包括一個使用三個 DRV7167 半橋 GaN 馬達驅動功率級的高功率密度區段、一個使用 AM2612 500MHz R5F 核心 MCU 和 AMC0106 功能隔離的 ΔΣ 調變器的準確即時控制級,以及透過工業乙太網路運作的高頻寬通訊。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN-FCRLF (VBN) 18 Ultra Librarian

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