DRV3233-Q1
- AEC-Q100 qualified
for automotive applications - Temperature options:
- DRV3233E: –40°C to +150°C, TA
- DRV3233Q: –40°C to +125°C,TA
-
Functional Safety-Compliant
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design available
- Systematic capability up to ASIL D targeted
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 4.5 to 60V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Charge pump for 50mA average gate current
- 100% PWM duty cycle support
- Overdrive supply of external switches
- Smart Gate Drive architecture
- 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Three-step dynamic drive current control
- Soft shutdown for power stage protection
- Low-side Current Sense Amplifier
- Sub-1mV low input offset across temperature
- 9-level adjustable gain
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- Multiple PWM
interface options available
- 6x, 3x, 1x PWM Modes
- PWM over SPI
- Supports 3.3V, and 5V Logic Inputs
- Optional programmable OTP for reset settings
- Advanced and configurable protection features
- Battery and power supply voltage monitors
- Phase feedback comparator
- MOSFET VDS and Rsense over current monitors
- Analog Built-In-Self-Test, Clock monitors
- Fault condition indicator pin
The DRV3233-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3233-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV3233-Q1 can operate from a single power supply with a wide input range from 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.
The DRV3233-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.
A wide range of diagnostics and protection features integrated in the DRV3233-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | DRV3233-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit With Accurate Current Sensing and Enhanced Diagnostics datasheet (Rev. F) | PDF | HTML | 2026/5/27 | ||
| Application brief | Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) | PDF | HTML | 2025/12/11 | |||
| Application brief | Striking a Balance: Automotive Designs for Enhanced Efficiency and EMI Control | PDF | HTML | 2023/10/2 |
設計與開發
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TIDA-020106 — 機電煞車 (EMB) 參考設計
機電煞車 (EMB) 是一種旨在推動汽車電氣化與智慧化的新型煞車技術，能為高階自動駕駛提供更低的整體成本、更快的反應速度與更精準的操控。本參考設計展示了完整的全功能 EMB 設計。本指南詳細說明了硬體、軟體以及功能安全設計。由於電子動力轉向系統 (EPS) 的關鍵零組件與 EMB 極為相似，因此本參考設計亦可作為 EPS 的設計參考。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTQFP (PHP) | 48 | Ultra Librarian |
| VQFN (RGZ) | 48 | Ultra Librarian |
| WQFN (RRY) | 32 | Ultra Librarian |