DRV3263-Q1
- AEC-Q100 Test Guidance for automotive applications
- Device ambient temperature: –40°C to +150°C
- Functional Safety-Compliant
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design will be available upon production release
- Systematic capability up to ASIL D targeted
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 8 to 85V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply
- Cutoff driver
- Drive N-channel MOSFET cutoff switches in multiple topologies
- Two SPI-controllable channels (DRV3263A) or
- One channel with SPI or HW pin control (DRV3263B)
- Smart Gate Drive architecture
- 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Independently configurable pre-charge and pre-discharge regions
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- Sub-1mV low input offset across temperature
- 8-level adjustable gain
- SPI-based detailed configuration and diagnostics with OTP memory to store default configuration settings
- DRVOFF independent driver disable pin
- High voltage wake up pin (nSLEEP)
- 6x, 3x, 1x, and Independent PWM modes
- Supports 3.3V and 5V logic inputs
- Integrated protection features
- Battery and power supply voltage monitors
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Analog Built-In Self-Test (ABIST)
- Device thermal warning and shutdown
- Fault condition indicator pin
The DRV3263-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3263-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage for driving external switches, which can be controlled through dedicated cutoff driver pins.
The DRV3263-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset and low gain error of the amplifiers enable the system to obtain precise motor current measurements.
A wide range of diagnostics and protection features are integrated with the DRV3263-Q1, enabling a robust motor drive system design and reduce external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | DRV3263-Q1 48V Battery 3-Phase Gate Driver Unit with Integrated Cutoff Drivers datasheet | PDF | HTML | 2026年 3月 26日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
DRV8363-Q1EVM — DRV8363-Q1 評估模組
DRV8363-Q1EVM 是以 BLDC 馬達之 DRV8363-Q1 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。
此 EVM 可快速評估 DRV8363-Q1 產品，其會利用梯形整流和控制轉動 BLDC 馬達。
所有電源供應器的狀態 LED 及故障 LED 均包含在內，以供使用者回饋。此套件需要 C2000 launchpad (LAUNCHXL-F280049C)，用於控制 DRV8363-Q1，並監控與回報故障。
LAUNCHXL- F280049C LaunchPad™ 開發套件為必需套件，且不包含於此 EVM 套件中。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGZ) | 48 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
- 晶圓廠位置
- 組裝地點