产品详情

Number of channels 4 Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Package name DFN0603 Peak pulse power (8/20 μs) (max) (W) 40 IO capacitance (typ) (pF) 4.8 IEC 61000-4-2 contact (±V) 15000 IEC 61000-4-5 (A) 3 Clamping voltage (V) 13 Dynamic resistance (typ) 0.45 Interface type Memory/SIM Card Breakdown voltage (min) (V) 6 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 125
Number of channels 4 Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Package name DFN0603 Peak pulse power (8/20 μs) (max) (W) 40 IO capacitance (typ) (pF) 4.8 IEC 61000-4-2 contact (±V) 15000 IEC 61000-4-5 (A) 3 Clamping voltage (V) 13 Dynamic resistance (typ) 0.45 Interface type Memory/SIM Card Breakdown voltage (min) (V) 6 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 125
X2SON (DPW) 4 0.64 mm² (0.8 mm × 0.8 mm)
  • Provides System-Level ESD Protection for Low-
    Voltage I/O Interface
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air-Gap Discharge
  • IEC 61000-4-5 (Surge): 3 A (8/20 µs)
  • I/O Capacitance 4.8 pF (Typical)
  • Dynamic Resistance 0.45 Ω (Typical)
  • DC Breakdown Voltage ±6 V (Minimum)
  • Ultra-Low Leakage Current 100 nA (Maximum)
    Overtemperature
  • 10-V Clamping Voltage (Maximum at IPP = 1 A)
  • Industrial Temperature Range: –40°C to +125°C
  • Space Saving DPW package (0.8-mm × 0.8-mm)
  • Provides System-Level ESD Protection for Low-
    Voltage I/O Interface
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air-Gap Discharge
  • IEC 61000-4-5 (Surge): 3 A (8/20 µs)
  • I/O Capacitance 4.8 pF (Typical)
  • Dynamic Resistance 0.45 Ω (Typical)
  • DC Breakdown Voltage ±6 V (Minimum)
  • Ultra-Low Leakage Current 100 nA (Maximum)
    Overtemperature
  • 10-V Clamping Voltage (Maximum at IPP = 1 A)
  • Industrial Temperature Range: –40°C to +125°C
  • Space Saving DPW package (0.8-mm × 0.8-mm)

The TPD4E101 device is a four-channel electrostatic discharge (ESD) transient voltage suppression (TVS) diode array in an ultra small 0.8-mm × 0.8-mm package. This TVS protection device offers ±15-kV contact ESD, ±15-kV IEC air-gap protection, and has four back-to-back TVS diodes for bipolar or bidirectional signal support. The 4.8-pF typical line capacitance of this ESD protection diode array is suitable for a wide range of applications supporting data rates up to 700 Mbps. The DPW package is convenient for component placement in space-constrained applications and the 0.48-mm pitch helps save on PCB manufacturing costs.

Typical applications of this ESD protection device are circuit protection for SIM cards, audio lines (microphones, earphones, and speakerphones), SD interfaces and pushbuttons. This ESD clamp is good for providing protection in end-equipment like cell phones, portable media players, wearables, set-top boxes, and eBooks.

The TPD4E101 device is a four-channel electrostatic discharge (ESD) transient voltage suppression (TVS) diode array in an ultra small 0.8-mm × 0.8-mm package. This TVS protection device offers ±15-kV contact ESD, ±15-kV IEC air-gap protection, and has four back-to-back TVS diodes for bipolar or bidirectional signal support. The 4.8-pF typical line capacitance of this ESD protection diode array is suitable for a wide range of applications supporting data rates up to 700 Mbps. The DPW package is convenient for component placement in space-constrained applications and the 0.48-mm pitch helps save on PCB manufacturing costs.

Typical applications of this ESD protection device are circuit protection for SIM cards, audio lines (microphones, earphones, and speakerphones), SD interfaces and pushbuttons. This ESD clamp is good for providing protection in end-equipment like cell phones, portable media players, wearables, set-top boxes, and eBooks.

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ESDEVM — 适用于 ESD 二极管封装(包括 0402、0201 等)的通用评估模块

静电敏感器件 (ESD) 评估模块 (EVM) 是用于 TI 大部分 ESD 产品系列的开发平台。为了测试任何型号的器件,该电路板支持所有传统的 ESD 封装结构。器件可以焊接到相应封装结构,然后进行测试。如果是典型的高速 ESD 二极管,则应采用阻抗受控布局来获取 S 参数并剥离电路板引线。如果是非高速 ESD 二极管,则应采用有布线连接到测试点的封装结构,以便轻松运行直流测试,例如击穿电压、保持电压、漏电流等。该电路板布局布线还可以通过将信号引脚短接至信号所在的位置,轻松地将任何器件引脚连接到电源 (VCC) 或地。
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仿真模型

TPD4E101 IBIS Model

SLVM598.ZIP (3 KB) - IBIS 模型
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封装 引脚 CAD 符号、封装和 3D 模型
X2SON (DPW) 4 Ultra Librarian

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