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Technology family LVC Number of channels 8 IOL (max) (mA) 24 IOH (max) (mA) -24 Supply current (max) (µA) 10 Input type Standard CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
Technology family LVC Number of channels 8 IOL (max) (mA) 24 IOH (max) (mA) -24 Supply current (max) (µA) 10 Input type Standard CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
SOIC (DW) 20 131.84 mm² (12.8 mm × 10.3 mm) TSSOP (PW) 20 41.6 mm² (6.5 mm × 6.4 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operates From 2 V to 3.6 V
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Supports Mixed-Mode Signal Operation on All Ports (5-V Input/Output Voltage With 3.3-V VCC)
  • Ioff Supports Partial-Power-Down Mode Operation

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operates From 2 V to 3.6 V
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Supports Mixed-Mode Signal Operation on All Ports (5-V Input/Output Voltage With 3.3-V VCC)
  • Ioff Supports Partial-Power-Down Mode Operation

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The SN74LVC540A-EP octal buffer/driver is designed for 2.7-V to 3.6-V VCC operation.

This device is ideal for driving bus lines or buffer-memory address registers. This device features inputs and outputs on opposite sides of the package that facilitate printed circuit board layout.

The 3-state control gate is a 2-input AND gate with active-low inputs so that, if either output-enable (OE1 or OE2) input is high, all outputs are in the high-impedance state.

Inputs can be driven from either 3.3-V or 5-V devices. This feature allows the use of this device as a translator in a mixed 3.3-V/5-V system environment.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74LVC540A-EP octal buffer/driver is designed for 2.7-V to 3.6-V VCC operation.

This device is ideal for driving bus lines or buffer-memory address registers. This device features inputs and outputs on opposite sides of the package that facilitate printed circuit board layout.

The 3-state control gate is a 2-input AND gate with active-low inputs so that, if either output-enable (OE1 or OE2) input is high, all outputs are in the high-impedance state.

Inputs can be driven from either 3.3-V or 5-V devices. This feature allows the use of this device as a translator in a mixed 3.3-V/5-V system environment.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 SN74LVC540A-EP 数据表 (Rev. A) 2004-5-4
* VID SN74LVC540A-EP VID V6204665 2016-6-21

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SOIC (DW) 20 Ultra Librarian
TSSOP (PW) 20 Ultra Librarian

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