SN74CB3Q3245
- High-Bandwidth Data Path (up to 500MHz)
- Equivalent to IDTQS3VH384 Device
- 5V Tolerant I/Os With Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4Ω Typ)
- Rail-to-Rail Switching on Data I/O Ports
- 0 to 5V Switching With 3.3V VCC
- 0 to 3.3V Switching With 2.5V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5pF Typ)
- Fast Switching Frequency (f OE = 20MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 1mA Typical)
- VCC Operating Range From 2.3V to 3.6V
- Data I/Os Support 0 to 5V Signaling Levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
- Control Inputs Can Be Driven by TTL or 5V/3.3V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000V Human-Body Model (A114B, Class II)
- 1000V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
The SN74CB3Q3245 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 device provides an optimized interface device designed for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3245 device is organized as an 8-bit bus switch with a single output-enable ( OE) input. When OE is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when the device is powered down. The device has isolation during power off.
To verify the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | SN74CB3Q3245 8-Bit FET Bus Switch 2.5V/3.3V Low-Voltage High-Bandwidth Bus Switch 数据表 (Rev. C) | PDF | HTML | 2026-8-20 | ||
| 应用手册 | 选择正确的德州仪器 (TI) 信号开关 (Rev. E) | PDF | HTML | 英语版 (Rev.E) | PDF | HTML | 2022-8-5 | |
| 应用手册 | 多路复用器和信号开关词汇表 (Rev. B) | 英语版 (Rev.B) | PDF | HTML | 2022-3-11 | ||
| 应用简报 | 利用关断保护信号开关消除电源时序 (Rev. C) | 英语版 (Rev.C) | PDF | HTML | 2021-10-21 |
设计与开发
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