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SN74ABT541B-EP

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具有 TTL 兼容型 CMOS 输入和三态输出的增强型产品 8 通道、4.5V 至 5.5V 缓冲器

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SN74ABT541B-EP

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Technology family ABT Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
Technology family ABT Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
TSSOP (PW) 20 41.6 mm² (6.5 mm × 6.4 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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* 数据表 SN74ABT541B-EP 数据表 2004-1-6
* VID SN74ABT541B-EP VID V6204700 2016-6-21

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TSSOP (PW) 20 Ultra Librarian
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