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LF156QML

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LF156QML

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产品详情

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 5 Input bias current (max) (pA) 100 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 5 Input bias current (max) (pA) 100 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
TO-CAN (LMC) 8 80.2816 mm² (8.96 mm × 8.96 mm)
  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared with MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability

Common Features

  • Low Input Bias Current: 30pA
  • Low Input Offset Current: 3pA
  • High Input Impedance: 1012Ω
  • Low Input Noise Current: 0.01 pA / √Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features

  • Extremely Fast Settling
    • Time to 0.01% 1.5μs
  • Fast Slew Rate 12V/µs
  • Wide Gain Bandwidth 5MHz
  • Low Input Noise Voltage 12 nV / √Hz

All trademarks are the property of their respective owners.

  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared with MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability

Common Features

  • Low Input Bias Current: 30pA
  • Low Input Offset Current: 3pA
  • High Input Impedance: 1012Ω
  • Low Input Noise Current: 0.01 pA / √Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features

  • Extremely Fast Settling
    • Time to 0.01% 1.5μs
  • Fast Slew Rate 12V/µs
  • Wide Gain Bandwidth 5MHz
  • Low Input Noise Voltage 12 nV / √Hz

All trademarks are the property of their respective owners.

This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 LF156QML JFET Input Operational Amplifiers 数据表 (Rev. A) 2013-3-25
电子书 The Signal e-book: 有关运算放大器设计主题的博客文章汇编 PDF | HTML 英语版 PDF | HTML 2018-1-31

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TO-CAN (LMC) 8 Ultra Librarian
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