LMG1205

활성

GaNFET 및 MOSFET용 5V UVLO를 지원하는 1.2A, 5A 90V, 하프 브리지 게이트 드라이버

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document-pdfAcrobat LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode datasheet (Rev. B) (영어) PDF | HTML

LMG1205

활성

데이터 시트

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제품 상세 정보

Power switch

GaNFET, MOSFET

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

5.5

Peak output current (A)

5

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

4

Rating

Catalog

Propagation delay time (µs)

0.035

Rise time (ns)

7

Fall time (ns)

3.5

Iq (mA)

0.09

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

-5

Features

Bootstrap supply voltage clamp, Split outputs on high and low side

Driver configuration

Half bridge

Power switch

GaNFET, MOSFET

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

5.5

Peak output current (A)

5

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

4

Rating

Catalog

Propagation delay time (µs)

0.035

Rise time (ns)

7

Fall time (ns)

3.5

Iq (mA)

0.09

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

-5

Features

Bootstrap supply voltage clamp, Split outputs on high and low side

Driver configuration

Half bridge

DSBGA (YFX)

12

3.24 mm² (— mm × — mm)

Independent high-side and low-side TTL logic inputs
1.2-A peak source, 5-A sink current
High-side floating bias voltage rail operates up to 100 VDC
Internal bootstrap supply voltage clamping
Split outputs for adjustable turnon, turnoff strength
0.6-Ω pulldown, 2.1-Ω pullup resistance
Fast propagation times (35 ns typical)
Excellent propagation delay matching (1.5 ns typical)
Supply rail undervoltage lockout
Low power consumption

Independent high-side and low-side TTL logic inputs
1.2-A peak source, 5-A sink current
High-side floating bias voltage rail operates up to 100 VDC
Internal bootstrap supply voltage clamping
Split outputs for adjustable turnon, turnoff strength
0.6-Ω pulldown, 2.1-Ω pullup resistance
Fast propagation times (35 ns typical)
Excellent propagation delay matching (1.5 ns typical)
Supply rail undervoltage lockout
Low power consumption

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

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기타 하프 브리지 드라이버 찾기

다운로드 스크립트와 함께 비디오 보기 비디오

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open-in-new

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LMG1210

활성

1.5A, 3A, 200V 하프 브리지 게이트 드라이버, 5V UVLO, GaNFET 및 MOSFET용 프로그래머블 데드 타임 This product offers superior switching performance (10-ns prop delay, 1-ns delay matching), resistor-programmable deadtime, an internal LDO, and 300-V/ns CMTI.

기술 자료

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15개 모두 보기

상위 문서	유형	직함	형식 옵션	날짜
*	데이터 시트	LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode datasheet (Rev. B)	PDF \| HTML	2023. 4. 14
	애플리케이션 노트	Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET	PDF \| HTML	2024. 3. 25
	애플리케이션 노트	Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits	PDF \| HTML	2023. 11. 15
	애플리케이션 노트	Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A)	PDF \| HTML	2023. 9. 8
	Application brief	GaN Applications	PDF \| HTML	2022. 8. 10
	Application brief	GaN Driver Schematic and Layout Recommendations	PDF \| HTML	2022. 8. 10
	Application brief	Nomenclature, Types, and Structure of GaN Transistors	PDF \| HTML	2022. 8. 4
	Application brief	Key Parameters and Driving Requirements of GaN FETs	PDF \| HTML	2022. 8. 4
	Application brief	How GaN Enables More Efficient and Reduced Form Factor Power Supplies	PDF \| HTML	2022. 8. 2
	애플리케이션 노트	Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A)	PDF \| HTML	2022. 2. 17
	Application brief	External Gate Resistor Selection Guide (Rev. A)		2020. 2. 28
	Application brief	Understanding Peak IOH and IOL Currents (Rev. A)		2020. 2. 28
	애플리케이션 노트	GaN Gate Driver Layout Help		2019. 5. 23
	백서	Optimizing multi-megahertz GaN driver design white paper (Rev. A)		2018. 11. 27
	백서	A comprehensive methodology to qualify the reliability of GaN products		2015. 3. 2

설계 및 개발

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평가 보드

LMG1205HBEVM — LMG1205 GaN 전력계 평가 모듈

80V 10A 전력계 EVM - LMG1205 하프 브리지 EVM 보드는 외부 PWM 신호를 위한 작고 사용이 간편한 전력계입니다. 이 EVM은 다양한 DC-DC 컨버터 토폴로지에서 GaN 하프 브리지를 구동하는 LMG1205의 성능을 평가하는 데 적합합니다. 하프 브리지의 성능을 추정하여 효율을 측정하는 데 사용할 수 있습니다. 이 모듈은 최대 10A의 전류를 공급할 수 있습니다. 그러나 온 보드 부품의 최대 작동 온도 사양을 초과하지 않도록 적절한 열 관리(강제 공기, 저주파에서 실행 등)를 따라야 합니다. 이 EVM은 개방형 (...)

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