DRV8334-Q1
- AEC-Q100 qualified for automotive applications. Temperature options:
- DRV8334EPHP: –40°C to +150°C, TA
- DRV8334QPHP: –40°C to +125°C,TA
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 4.5 to 60V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
- Smart Gate Drive architecture
- 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Three-step dynamic drive current control
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- Sub-1mV low input offset across temperature
- 9-level adjustable gain
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- 6x, 3x, 1x, and Independent PWM Modes
- Supports 3.3V, and 5V Logic Inputs
- Optional programmable OTP for reset settings
- Integrated protection features
- Battery and power supply voltage monitors
- Phase feedback comparator
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Device thermal warning and shutdown
- Fault condition indicator pin
The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.
The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.
A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | DRV8334-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit with accurate current sensing and enhanced diagnostics datasheet | PDF | HTML | 2023/05/17 |
| Application brief | Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) | PDF | HTML | 2025/12/11 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
DRV8334EVM — 3상 게이트 드라이버용 DRV8334 평가 모듈
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| HTQFP (PHP) | 48 | Ultra Librarian |
| VQFN (RGZ) | 48 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치