DRV8334-Q1

활성

정확한 전류 감지를 지원하는 오토모티브 12V~24V 배터리 3상 게이트 드라이버 유닛

제품 상세 정보

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 81 mm² 9 x 9 VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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기술 자료

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2개 모두 보기
유형 직함 날짜
* Data sheet DRV8334-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit with accurate current sensing and enhanced diagnostics datasheet PDF | HTML 2023/05/17
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 2025/12/11

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

DRV8334EVM — 3상 게이트 드라이버용 DRV8334 평가 모듈

DRV8334 평가 모듈(EVM)은 BLDC 모터용 DRV8334 게이트 드라이버를 기반으로 하는 30A, 3상 브러시리스 DC 드라이브 단계입니다. EVM을 사용하면 사다리꼴 전류 및 제어를 사용하여 BLDC 모터를 구동하는 DRV8334 장치의 빠른 평가를 수행할 수 있습니다. 사용자 피드백을 위해 모든 전원 공급 장치의 상태 LED와 장애 표시등이 포함되어 있습니다. C2000™ LaunchPad™ 개발 키트(LAUNCHXL-F280049C)가 필요하며 DRV8334를 제어하고 오류를 모니터링하고 보고하는 데 사용됩니다.
사용 설명서: PDF | HTML
TI.com에서 구매 불가
계산 툴

DRV8334-SMART-GATE-DRIVE-REGISTER-SETTINGS-CALC Calculator to provide recommended smart gate drive register settings for the DRV8334

This calculator provides initial recommendations for smart gate drive register configurations for the DRV8334 based on user inputs.
지원되는 제품 및 하드웨어

지원되는 제품 및 하드웨어

제품
BLDC 드라이버
DRV8334 정확한 전류 감지를 지원하는 60V 1000mA~2,000mA 3상 게이트 드라이버 DRV8334-Q1 정확한 전류 감지를 지원하는 오토모티브 12V~24V 배터리 3상 게이트 드라이버 유닛
패키지 CAD 기호, 풋프린트 및 3D 모델
HTQFP (PHP) 48 Ultra Librarian
VQFN (RGZ) 48 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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