Produktdetails

Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Configuration 1:1 SPST Number of channels 4 Bandwidth (MHz) 500 Supply voltage (max) (V) 3.6 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 2000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 4 CON (typ) (pF) 8 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 Turnoff time (disable) (max) (ns) 5.3 Turnon time (enable) (max) (ns) 6.6 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Configuration 1:1 SPST Number of channels 4 Bandwidth (MHz) 500 Supply voltage (max) (V) 3.6 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 2000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 4 CON (typ) (pF) 8 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 Turnoff time (disable) (max) (ns) 5.3 Turnon time (enable) (max) (ns) 6.6 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 14 32 mm² 5 x 6.4 TVSOP (DGV) 14 23.04 mm² 3.6 x 6.4 VQFN (RGY) 14 12.25 mm² 3.5 x 3.5
  • High-bandwidth data path (up to 500MHz)
  • 5V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0V to 5V switching with 3.3V VCC
    • 0V to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (fOE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.3mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0V to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL, 5V, or 3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000V Human-Body Model (A114-B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating.
  • For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application note CBT-C, CB3T, and CB3Q Signal-Switch Families.
  • High-bandwidth data path (up to 500MHz)
  • 5V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0V to 5V switching with 3.3V VCC
    • 0V to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (fOE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.3mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0V to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL, 5V, or 3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000V Human-Body Model (A114-B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating.
  • For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application note CBT-C, CB3T, and CB3Q Signal-Switch Families.

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet SN74CB3Q3125 Quadruple FET Bus Switch 2.5V/3.3V Low-Voltage, High-Bandwidth Bus Switch datasheet (Rev. D) PDF | HTML 16 Jan 2026
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dez 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 Nov 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Technical article Logic gates and switches with Ioff or powered-off protection: empowering you to po PDF | HTML 02 Nov 2016
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dez 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 Nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
User guide Signal Switch Data Book (Rev. A) 14 Nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 Feb 2003
Selection guide Logic Guide (Rev. AC) PDF | HTML 01 Jun 1994

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Schnittstellenadapter

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Die EVM-LEADED1-Platine ermöglicht schnelles Testen und Testbrettaufbauten von gängigen bleihaltigen Gehäusen von TI.  Die Platine verfügt über Anschlussflächen, um die oberflächenmontierten Gehäuse D, DBQ, DCT,DCU, DDF, DGS, DGV und PW von TI in 100-mil-DIP-Stiftleisten umzuwandeln.     

Benutzerhandbuch: PDF
Simulationsmodell

HSPICE MODEL OF SN74CB3Q3125

SCEJ199.ZIP (93 KB) - HSpice Model
Simulationsmodell

SN74CB3Q3125 IBIS Model (Rev. A)

SCDM067A.ZIP (25 KB) - IBIS Model
Referenzdesigns

TIDA-00180 — Stromversorgung mit programmierbarer Ausgangsspannung und Schutzfunktion für Positionsgeberschnittst

This reference design implements a universal power supply with programmable output voltage and innovative smart eFuse technology for use in a multi-standard position encoder interface module on an industrial drive. The eFuse provides inrush-current and over-current protection as well as user (...)
Design guide: PDF
Schaltplan: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
SSOP (DBQ) 16 Ultra Librarian
TSSOP (PW) 14 Ultra Librarian
TVSOP (DGV) 14 Ultra Librarian
VQFN (RGY) 14 Ultra Librarian

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