封装信息
| 封装 | 引脚 SOIC (D) | 8 |
| 工作温度范围 (°C) |
| 包装数量 | 包装 2,500 | LARGE T&R |
TLE2161 的特性
- Excellent Output Drive Capability
VO = ± 2.5 V Min at RL = 100
,
VCC± = ± 5 V
VO = ± 12.5 V Min at RL = 600,
VCC± = ± 15 V - Low Supply Current...280 uA Typ
- Decompensated for High Slew Rate and
Gain-Bandwidth Product
AVD = 0.5 Min
Slew Rate = 10 V/us Typ
Gain-Bandwidth Product = 6.5 MHz Typ - Wide Operating Supply Voltage Range
VCC ± = ± 3.5 V to ± 18 V - High Open-Loop Gain...280 V/mV Typ
- Low Offset Voltage...500 uV Max
- Low Offset Voltage Drift With Time
0.04 uV/Month Typ - Low Input Bias Current...5 pA Typ
TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u
POWER OPERATIONAL AMPLIFIERS
SLOS049D - NOVEMBER 1989 - REVISED MAY 1996
TLE2161 的说明
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.