产品详情

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 0.5 Vos (offset voltage at 25°C) (max) (mV) 1.1 Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 17 Rating Catalog Operating temperature range (°C) to Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 CMRR (typ) (dB) 102 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 0.5 Vos (offset voltage at 25°C) (max) (mV) 1.1 Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 17 Rating Catalog Operating temperature range (°C) to Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 CMRR (typ) (dB) 102 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
PDIP (N) 14 181.42 mm² 19.3 x 9.4 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Military Temp
    Range . . . 10 µA Typ at VCC ± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time
    0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/√Hz Typ

All trademarks are the property of their respective owners.

  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Military Temp
    Range . . . 10 µA Typ at VCC ± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time
    0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/√Hz Typ

All trademarks are the property of their respective owners.

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

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类型 标题 下载最新的英语版本 日期
* 数据表 Excalibur High-Speed Low-Power Precision Operational Amplifiers. 数据表 (Rev. D) 2010年 11月 24日
电子书 The Signal e-book: 有关运算放大器设计主题的博客文章汇编 英语版 2018年 1月 31日
应用手册 TLE202x EMI Immunity Performance (Rev. A) 2012年 11月 5日

设计和开发

如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。

评估板

AMP-PDK-EVM — 放大器高性能开发套件评估模块

放大器高性能开发套件 (PDK) 是一款用于测试常见运算放大器参数的评估模块 (EVM) 套件,与大多数运算放大器和比较器均兼容。该 EVM 套件提供了一个主板,主板上具有多个插槽式子卡选项以满足封装需求,使工程师能够快速评估和验证器件性能。

AMP-PDK-EVM 套件支持五种常用的业界通用封装,包括:

  • D (SOIC-8)
  • PW (TSSOP-14)
  • DGK (VSSOP-8)
  • DBV(SOT23-5 和 SOT23-6)
  • DCK(SC70-5 和 SC70-6)
用户指南: PDF | HTML
最新英语版本 (Rev.B): PDF | HTML
仿真模型

TLE2021 PSpice Model (Rev. A)

SGLM033A.ZIP (15 KB) - PSpice Model
仿真模型

TLE2021 TINA-TI Reference Design (Rev. A)

SGLM031A.TSC (317 KB) - TINA-TI Reference Design
仿真模型

TLE2021 TINA-TI Spice Model (Rev. A)

SGLM032A.ZIP (9 KB) - TINA-TI Spice Model
计算工具

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模拟工程师计算器旨在加快模拟电路设计工程师经常使用的许多重复性计算。该基于 PC 的工具提供图形界面,其中显示各种常见计算的列表(从使用反馈电阻器设置运算放大器增益到为稳定模数转换器 (ADC) 驱动器缓冲器电路选择合适的电路设计元件)。除了可用作单独的工具之外,该计算器还能够很好地与模拟工程师口袋参考书中所述的概念配合使用。
设计工具

CIRCUIT060013 — 采用 T 网络反馈电路的反相放大器

该设计将输入信号 VIN 反相并应用 1000V/V 或 60dB 的信号增益。具有 T 反馈网络的反相放大器可用于获得高增益,而无需 R4 具有很小的值或反馈电阻器具有很大的值。
设计工具

CIRCUIT060015 — 可调节基准电压电路

该电路结合了一个反相和同相放大器,可使基准电压在正负输入电压范围内进行调节。可通过增加增益来提高最大负基准电压电平。
设计工具

CIRCUIT060074 — 采用比较器的高侧电流检测电路

该高侧电流检测解决方案使用一个具有轨到轨输入共模范围的比较器,如果负载电流上升至超过 1A,则在比较器输出端 (COMP OUT) 产生过流警报 (OC-Alert) 信号。该实现中的 OC-Alert 信号低电平有效。因此,当超过 1A 阈值后,比较器输出变为低电平。实现了迟滞,使得当负载电流减小至 0.5 A(减少 50%)时,OC-Alert 将返回到逻辑高电平状态。该电路使用漏极开路输出比较器,从而对输出高逻辑电平进行电平转换,以控制数字逻辑输入引脚。对于需要驱动 MOSFET 开关栅极的应用,最好使用具有推挽输出的比较器。
模拟工具

PSPICE-FOR-TI — 适用于 TI 设计和模拟工具的 PSpice®

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用,包括业内超大的模型库之一,涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库,您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案,然后再进行布局和制造,可缩短产品上市时间并降低开发成本。

在 PSpice for TI 设计和仿真工具中,您可以搜索 TI (...)
模拟工具

TINA-TI — 基于 SPICE 的模拟仿真程序

TINA-TI 提供了 SPICE 所有的传统直流、瞬态和频域分析以及更多。TINA 具有广泛的后处理功能,允许您按照希望的方式设置结果的格式。虚拟仪器允许您选择输入波形、探针电路节点电压和波形。TINA 的原理图捕获非常直观 - 真正的“快速入门”。

TINA-TI 安装需要大约 500MB。直接安装,如果想卸载也很容易。我们相信您肯定会爱不释手。

TINA 是德州仪器 (TI) 专有的 DesignSoft 产品。该免费版本具有完整的功能,但不支持完整版 TINA 所提供的某些其他功能。

如需获取可用 TINA-TI 模型的完整列表,请参阅:SpiceRack - 完整列表 

需要 HSpice (...)

用户指南: PDF
英语版 (Rev.A): PDF
封装 引脚 CAD 符号、封装和 3D 模型
PDIP (N) 14 Ultra Librarian
SOIC (DW) 16 Ultra Librarian

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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