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SN74HCT244-EP

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具有 TTL 兼容型 CMOS 输入和 3 态输出的 8 通道、4.5V 至 5.5V 缓冲器（增强型产品）

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SN74HCT244-EP

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产品详情

Technology family HCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 Supply current (max) (µA) 80 IOH (max) (mA) -6 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
Technology family HCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 Supply current (max) (µA) 80 IOH (max) (mA) -6 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operating Voltage Range of 4.5 V to 5.5 V
  • High-Current Inverting Outputs Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 160-µA Max ICC
  • Typical tpd = 13 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operating Voltage Range of 4.5 V to 5.5 V
  • High-Current Inverting Outputs Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 160-µA Max ICC
  • Typical tpd = 13 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74HCT244 device is organized as two 4-bit buffers/drivers, with separate output-enable (OE)\ inputs. When OE\ is low, the device passes noninverted data from the A inputs to the Y outputs. When OE\ is high, the outputs are in the high-impedance state.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74HCT244 device is organized as two 4-bit buffers/drivers, with separate output-enable (OE)\ inputs. When OE\ is low, the device passes noninverted data from the A inputs to the Y outputs. When OE\ is high, the outputs are in the high-impedance state.
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类型 标题 下载最新的英语版本 日期
* 数据表 SN74HCT244-EP 数据表 2004年 1月 6日

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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