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SN74HC165-EP

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8 位并行负载移位寄存器（增强型产品）

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SN74HC165-EP

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产品详情

Configuration Parallel-in, Serial-out Bits (#) 8 Technology family HC Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Input type Standard CMOS Output type Push-Pull Clock frequency (MHz) 24 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Supply current (max) (µA) 160 Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Operating temperature range (°C) -40 to 125 Rating HiRel Enhanced Product
Configuration Parallel-in, Serial-out Bits (#) 8 Technology family HC Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Input type Standard CMOS Output type Push-Pull Clock frequency (MHz) 24 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Supply current (max) (µA) 160 Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Operating temperature range (°C) -40 to 125 Rating HiRel Enhanced Product
TSSOP (PW) 16 32 mm² 5 x 6.4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of Up To –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • 2-V to 6-V VCC Operation
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 13 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Complementary Outputs
  • Direct Overriding Load (Data) Inputs
  • Gated Clock Inputs
  • Parallel-to-Serial Data Conversion

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of Up To –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • 2-V to 6-V VCC Operation
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 13 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Complementary Outputs
  • Direct Overriding Load (Data) Inputs
  • Gated Clock Inputs
  • Parallel-to-Serial Data Conversion

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The SN74HC165 is an 8-bit parallel-load shift register that, when clocked, shifts the data toward a serial (QH) output. Parallel-in access to each stage is provided by eight individual direct data (A-H) inputs that are enabled by a low level at the shift/load (SH/LD) input. The SN74HC165 device also features a clock-inhibit (CLK INH) function and a complementary serial (QH) output.

Clocking is accomplished by a low-to-high transition of the clock (CLK) input while SH/LD\ is held high and CLK INH is held low. The functions of CLK and CLK INH are interchangeable. Since a low CLK and a low-to-high transition of CLK INH also accomplish clocking, CLK INH should be changed to the high level only while CLK is high. Parallel loading is inhibited when SH/LD\ is held high. While SH/LD\ is low, the parallel inputs to the register are enabled independently of the levels of the CLK, CLK INH, or serial (SER) inputs.

The SN74HC165 is an 8-bit parallel-load shift register that, when clocked, shifts the data toward a serial (QH) output. Parallel-in access to each stage is provided by eight individual direct data (A-H) inputs that are enabled by a low level at the shift/load (SH/LD) input. The SN74HC165 device also features a clock-inhibit (CLK INH) function and a complementary serial (QH) output.

Clocking is accomplished by a low-to-high transition of the clock (CLK) input while SH/LD\ is held high and CLK INH is held low. The functions of CLK and CLK INH are interchangeable. Since a low CLK and a low-to-high transition of CLK INH also accomplish clocking, CLK INH should be changed to the high level only while CLK is high. Parallel loading is inhibited when SH/LD\ is held high. While SH/LD\ is low, the parallel inputs to the register are enabled independently of the levels of the CLK, CLK INH, or serial (SER) inputs.
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类型 标题 下载最新的英语版本 日期
* 数据表 SN74HC165-EP 数据表 (Rev. A) 2004年 1月 6日
* VID SN74HC165-EP VID V6204689 2016年 6月 21日
应用手册 Power-Up Behavior of Clocked Devices (Rev. B) PDF | HTML 2022年 12月 15日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
用户指南 Signal Switch Data Book (Rev. A) 2003年 11月 14日
应用手册 TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
应用手册 CMOS Power Consumption and CPD Calculation (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Input and Output Characteristics of Digital Integrated Circuits 1996年 10月 1日
应用手册 Live Insertion 1996年 10月 1日
应用手册 SN54/74HCT CMOS Logic Family Applications and Restrictions 1996年 5月 1日
应用手册 Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 1996年 4月 1日

设计和开发

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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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