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SN74CBTLV3857

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具有内部下拉电阻的 3.3V、1:1 (SPST)、10 通道 FET 总线开关

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SN74CBTLV3857

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Protocols Analog Configuration 1:1 SPST Number of channels 10 Bandwidth (MHz) 200 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Operating temperature range (°C) -40 to 85 Input/output continuous current (max) (mA) 48 COFF (typ) (pF) 5 OFF-state leakage current (max) (µA) 1000 Ron (max) (mΩ) 40000 VIH (min) (V) Vref+180mV VIL (max) (V) Vref-180mV Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 10 Bandwidth (MHz) 200 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Operating temperature range (°C) -40 to 85 Input/output continuous current (max) (mA) 48 COFF (typ) (pF) 5 OFF-state leakage current (max) (µA) 1000 Ron (max) (mΩ) 40000 VIH (min) (V) Vref+180mV VIL (max) (V) Vref-180mV Rating Catalog
SOIC (DW) 24 159.65 mm² (15.5 mm × 10.3 mm)
  • Enable Signal Is SSTL_2 Compatible
  • Flow-Through Architecture Optimizes PCB Layout
  • Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications
  • Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM
  • Internal 10-k Pulldown Resistors to Ground on B Port
  • Internal 50-k Pullup Resistor on Output-Enable Input
  • Rail-to-Rail Switching on Data I/O Ports
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • Enable Signal Is SSTL_2 Compatible
  • Flow-Through Architecture Optimizes PCB Layout
  • Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications
  • Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM
  • Internal 10-k Pulldown Resistors to Ground on B Port
  • Internal 50-k Pullup Resistor on Output-Enable Input
  • Rail-to-Rail Switching on Data I/O Ports
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

This 10-bit FET bus switch is designed for 3-V to 3.6-V VCC operation and SSTL_2 output-enable (OE\) input levels.

When OE\ is low, the 10-bit bus switch is on, and port A is connected to port B. When OE\ is high, the switch is open, and the high-impedance state exists between the two ports. There are 10-k pulldown resistors to ground on the B port.

The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2 data path.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

This 10-bit FET bus switch is designed for 3-V to 3.6-V VCC operation and SSTL_2 output-enable (OE\) input levels.

When OE\ is low, the 10-bit bus switch is on, and port A is connected to port B. When OE\ is high, the switch is open, and the high-impedance state exists between the two ports. There are 10-k pulldown resistors to ground on the B port.

The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2 data path.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 SN74CBTLV3857 数据表 (Rev. E) 2003-10-13
应用手册 选择正确的德州仪器 (TI) 信号开关 (Rev. E) PDF | HTML 英语版 (Rev.E) PDF | HTML 2022-8-5
应用手册 多路复用器和信号开关词汇表 (Rev. B) 英语版 (Rev.B) PDF | HTML 2022-3-11
应用简报 利用关断保护信号开关消除电源时序 (Rev. C) 英语版 (Rev.C) PDF | HTML 2021-10-21

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SN74CBTLV3857 IBIS Model

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