产品详情

Number of channels 8 Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Input type TTL-Compatible CMOS Output type 3-State Clock frequency (max) (MHz) 90 IOL (max) (mA) 24 IOH (max) (mA) -24 Supply current (max) (µA) 80 Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product
Number of channels 8 Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Input type TTL-Compatible CMOS Output type 3-State Clock frequency (max) (MHz) 90 IOL (max) (mA) 24 IOH (max) (mA) -24 Supply current (max) (µA) 80 Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product
SOIC (DW) 20 131.84 mm² 12.8 x 10.3
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • 4.5-V to 5.5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 10 ns at 5 V
  • Inputs Are TTL-Voltage Compatible

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • 4.5-V to 5.5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 10 ns at 5 V
  • Inputs Are TTL-Voltage Compatible

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

This 8-bit latch features 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. The device is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight latches are D-type transparent latches. When the latch-enable (LE) input is high, the Q outputs follow the data (D) inputs. When LE is taken low, the Q outputs are latched at the logic levels set up at the D inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines in bus-organized systems without need for interface or pullup components.

OE\ does not affect the internal operations of the latches. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This 8-bit latch features 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. The device is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight latches are D-type transparent latches. When the latch-enable (LE) input is high, the Q outputs follow the data (D) inputs. When LE is taken low, the Q outputs are latched at the logic levels set up at the D inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines in bus-organized systems without need for interface or pullup components.

OE\ does not affect the internal operations of the latches. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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类型 标题 下载最新的英语版本 日期
* 数据表 SN74ACT373-EP 数据表 2003年 9月 30日
* VID SN74ACT373-EP VID V6204619 2016年 6月 21日
应用手册 Power-Up Behavior of Clocked Devices (Rev. B) PDF | HTML 2022年 12月 15日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 选择正确的电平转换解决方案 (Rev. A) 英语版 (Rev.A) 2006年 3月 23日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
应用手册 TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
应用手册 CMOS Power Consumption and CPD Calculation (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 1996年 4月 1日

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包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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