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SN54BCT2244

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具有三态输出的军用 8 通道 4.5V 至 5.5V 缓冲器

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数据表

SN54BCT2244

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产品详情

Technology family BCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 12 Supply current (max) (µA) 77000 IOH (max) (mA) -12 Input type Bipolar Output type 3-State Features Balanced outputs, Damping resistors, Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Rating Military Operating temperature range (°C) -55 to 125
Technology family BCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 12 Supply current (max) (µA) 77000 IOH (max) (mA) -12 Input type Bipolar Output type 3-State Features Balanced outputs, Damping resistors, Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Rating Military Operating temperature range (°C) -55 to 125
CDIP (J) 20 167.464 mm² 24.2 x 6.92 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • Operating Voltage Range of 4.5 V to 5.5 V
  • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
  • Output Ports Have Equivalent 33- Series
  • Resistors, So No External Resistors Are Required
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Operating Voltage Range of 4.5 V to 5.5 V
  • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
  • Output Ports Have Equivalent 33- Series
  • Resistors, So No External Resistors Are Required
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers

The ’BCT2244 devices are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. Together with the ’BCT2240 devices and SN74BCT2241, these devices provide the choice of selected combinations of inverting and noninverting outputs, symmetrical active-low output-enable (OE)\ inputs, and complementary OE and OE\ inputs. These devices feature high fan-out and improved fan-in.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The outputs, which are designed to source or sink up to 12 mA, include 33- series resistors to reduce overshoot and undershoot.

The ’BCT2244 devices are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. Together with the ’BCT2240 devices and SN74BCT2241, these devices provide the choice of selected combinations of inverting and noninverting outputs, symmetrical active-low output-enable (OE)\ inputs, and complementary OE and OE\ inputs. These devices feature high fan-out and improved fan-in.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The outputs, which are designed to source or sink up to 12 mA, include 33- series resistors to reduce overshoot and undershoot.
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类型 标题 下载最新的英语版本 日期
* 数据表 SN54BCT2244, SN74BCT2244 数据表 (Rev. D) 2003年 3月 11日
* SMD SN54BCT2244 SMD 5962-90741 2016年 6月 21日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
应用手册 TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Input and Output Characteristics of Digital Integrated Circuits 1996年 10月 1日
应用手册 Live Insertion 1996年 10月 1日

设计和开发

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封装 引脚 下载
CDIP (J) 20 查看选项
LCCC (FK) 20 查看选项
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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