Number of channels
2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
2.5
Vos (offset voltage at 25°C) (max) (mV)
0.005
Offset drift (typ) (µV/°C)
0.005
Input bias current (max) (pA)
350
GBW (typ) (MHz)
10
Features
EMI Hardened, High Cload Drive, Zero Crossover, Zero Drift
Slew rate (typ) (V/µs)
5
Rail-to-rail
In, Out
Iq per channel (typ) (mA)
1.7
Vn at 1 kHz (typ) (nV√Hz)
7
CMRR (typ) (dB)
138
Rating
Catalog
Operating temperature range (°C)
-40 to 125
Iout (typ) (A)
0.06
Architecture
CMOS
Input common mode headroom (to negative supply) (typ) (V)
-0.1
Input common mode headroom (to positive supply) (typ) (V)
0.1
Output swing headroom (to negative supply) (typ) (V)
0.01
Output swing headroom (to positive supply) (typ) (V)
-0.005
THD + N at 1 kHz (typ) (%)
0.0005
Number of channels
2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
2.5
Vos (offset voltage at 25°C) (max) (mV)
0.005
Offset drift (typ) (µV/°C)
0.005
Input bias current (max) (pA)
350
GBW (typ) (MHz)
10
Features
EMI Hardened, High Cload Drive, Zero Crossover, Zero Drift
Slew rate (typ) (V/µs)
5
Rail-to-rail
In, Out
Iq per channel (typ) (mA)
1.7
Vn at 1 kHz (typ) (nV√Hz)
7
CMRR (typ) (dB)
138
Rating
Catalog
Operating temperature range (°C)
-40 to 125
Iout (typ) (A)
0.06
Architecture
CMOS
Input common mode headroom (to negative supply) (typ) (V)
-0.1
Input common mode headroom (to positive supply) (typ) (V)
0.1
Output swing headroom (to negative supply) (typ) (V)
0.01
Output swing headroom (to positive supply) (typ) (V)
-0.005
THD + N at 1 kHz (typ) (%)
0.0005