LF411QML-SP

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航天级、单路、30V、3MHz、低失调电压运算放大器

产品详情

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 15 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 2 Vn at 1 kHz (typ) (nV√Hz) 18 Rating Space Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 10 Input bias current (max) (pA) 200 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Radiation, TID (typ) (krad) 100 Radiation, SEL (MeV·cm2/mg) Bipolar Input common mode headroom (to negative supply) (typ) (V) 3.5 Input common mode headroom (to positive supply) (typ) (V) 0.5 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.5
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 15 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 2 Vn at 1 kHz (typ) (nV√Hz) 18 Rating Space Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 10 Input bias current (max) (pA) 200 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Radiation, TID (typ) (krad) 100 Radiation, SEL (MeV·cm2/mg) Bipolar Input common mode headroom (to negative supply) (typ) (V) 3.5 Input common mode headroom (to positive supply) (typ) (V) 0.5 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.5
CFP (NAC) 10 62.9285 mm² 9.91 x 6.35
  • Available with Radiation Specification
    • ELDRS FREE 100 krad(Si)
  • Internally Trimmed Offset Voltage: 0.5 mV(Typ)
  • Input Offset Voltage Drift: 10 μV/°C
  • Low Input Bias Current: 50 pA
  • Low Input Noise Current: 0.01 pA/√Hz
  • Wide Gain Bandwidth: 3 MHz
  • High Slew Rate: 10V/μs
  • Low Supply Current: 1.8 mA
  • High Input Impedance: 1012Ω
  • Low Total Harmonic Distortion: AV = 10, RL = 10KΩ, VO = 20VP-P, BW = 20Hz - 20KHz <0.02%
  • Low 1/f Noise Corner: 50 Hz
  • Fast Settling Time to 0.01%: 2 μs

All trademarks are the property of their respective owners.

  • Available with Radiation Specification
    • ELDRS FREE 100 krad(Si)
  • Internally Trimmed Offset Voltage: 0.5 mV(Typ)
  • Input Offset Voltage Drift: 10 μV/°C
  • Low Input Bias Current: 50 pA
  • Low Input Noise Current: 0.01 pA/√Hz
  • Wide Gain Bandwidth: 3 MHz
  • High Slew Rate: 10V/μs
  • Low Supply Current: 1.8 mA
  • High Input Impedance: 1012Ω
  • Low Total Harmonic Distortion: AV = 10, RL = 10KΩ, VO = 20VP-P, BW = 20Hz - 20KHz <0.02%
  • Low 1/f Noise Corner: 50 Hz
  • Fast Settling Time to 0.01%: 2 μs

All trademarks are the property of their respective owners.

This device is a low cost, high speed, JFET input operational amplifier with very low input offset voltage and ensured input offset voltage drift. It requires low supply current yet maintains a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF411QML is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs.

This amplifier may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.

This device is a low cost, high speed, JFET input operational amplifier with very low input offset voltage and ensured input offset voltage drift. It requires low supply current yet maintains a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF411QML is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs.

This amplifier may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.

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类型 标题 下载最新的英语版本 日期
* 数据表 LF411QML Low Offset, Low Drift JFET Input Operational Amplifier 数据表 (Rev. C) 2013年 3月 26日
* SMD LF411QML-SP SMD 5962R1122201VZA 2016年 6月 21日
* 辐射与可靠性报告 LF411MWGRLWQMLV TID Report 2012年 5月 9日
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订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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