LF356-MIL
- Advantages
- Replace Expensive Hybrid and Module FET Op Amps
- Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
- Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
- Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
- New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
- Internal Compensation and Large Differential Input Voltage Capability
- Common Features
- Low Input Bias Current: 30 pA
- Low Input Offset Current: 3 pA
- High Input Impedance: 1012 Ω
- Low Input Noise Current: 0.01 pA/√Hz
- High Common-Mode Rejection Ratio: 100 dB
- Large DC Voltage Gain: 106 dB
- Uncommon Features
- Extremely Fast Settling Time to 0.01%: 1.5 µs
- Fast Slew Rate: 12 V/µs
- Wide Gain Bandwidth: 5 MHz
- Low Input Noise Voltage: 12 nV/√Hz
The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
技术文档
未找到结果。请清除搜索并重试。
查看全部 1 类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | LF356-MIL JFET Input Operational Amplifier 数据表 | PDF | HTML | 2017年 6月 21日 |
订购和质量
包含信息:
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
包含信息:
- 制造厂地点
- 封装厂地点