产品详情

Rating Catalog Architecture Gate driver Vs ABS (max) (V) 85 Operating temperature range (°C) -40 to 150
Rating Catalog Architecture Gate driver Vs ABS (max) (V) 85 Operating temperature range (°C) -40 to 150
VQFN (RGZ) 48 49 mm² 7 x 7
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8363 is an integrated smart gate driver for 48V three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8363 is an integrated smart gate driver for 48V three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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封装 引脚 CAD 符号、封装和 3D 模型
VQFN (RGZ) 48 Ultra Librarian

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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