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电池充电器 IC

BQ2002D

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具有 dT/dt 终止功能的镍镉电池/镍氢电池充电控制器

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BQ2002D

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产品详情

Rating Catalog Number of series cells 1, 2, 3, 4 Cell chemistry NiCd, NiMH Charge current (max) (A) 2 Features BAT temp thermistor monitoring (hot/cold profile) Vin (min) (V) 4 Vin (max) (V) 6 Absolute max Vin (max) (V) 7 Control topology Linear Battery charge voltage (min) (V) 0 Battery charge voltage (max) (V) 6 Control interface Standalone (RC-Settable) Operating temperature range (°C) 0 to 70
Rating Catalog Number of series cells 1, 2, 3, 4 Cell chemistry NiCd, NiMH Charge current (max) (A) 2 Features BAT temp thermistor monitoring (hot/cold profile) Vin (min) (V) 4 Vin (max) (V) 6 Absolute max Vin (max) (V) 7 Control topology Linear Battery charge voltage (min) (V) 0 Battery charge voltage (max) (V) 6 Control interface Standalone (RC-Settable) Operating temperature range (°C) 0 to 70
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Fast charge of nickel cadmium or nickel-metal hydride batteries
  • Direct LED output displays charge status
  • Fast-charge termination by rate of rise of temperature, maximum voltage, maximum
    temperature, and maximum time
  • Internal band-gap voltage reference
  • Optional top-off charge (bq2002T only)
  • Selectable pulse-trickle charge rates (bq2002T only)
  • Low-power mode
  • 8-pin 300-mil DIP or 150-mil SOIC
  • Fast charge of nickel cadmium or nickel-metal hydride batteries
  • Direct LED output displays charge status
  • Fast-charge termination by rate of rise of temperature, maximum voltage, maximum
    temperature, and maximum time
  • Internal band-gap voltage reference
  • Optional top-off charge (bq2002T only)
  • Selectable pulse-trickle charge rates (bq2002T only)
  • Low-power mode
  • 8-pin 300-mil DIP or 150-mil SOIC

The bq2002D/T Fast-Charge IC are low-cost CMOS battery-charge controllers able to provide reliable charge termination for both NiCd and NiMH battery applications. Controlling a current-limited or constant-current supply allows the bq2002D/T to be the basis for a cost-effective stand-alone or system-integrated charger. The bq2002D/T integrates fast charge with optional top-off and pulsed-trickle control in a single IC for charging one or more NiCd or NiMH battery cells.

Fast charge is initiated on application of the charging supply or battery replacement. For safety, fast charge is inhibited if the battery temperature and voltage are outside configured limits.

Fast charge is terminated by any of the following:

  • Rate of temperature rise
  • Maximum voltage
  • Maximum temperature
  • Maximum time

After fast charge, the bq2002T optionally tops-off and pulse-trickles the battery per the pre-configured limits. Fast charge may be inhibited using the INH pin. The bq2002D/T may be placed in low-standby-power mode to reduce system power consumption.

The bq2002D/T Fast-Charge IC are low-cost CMOS battery-charge controllers able to provide reliable charge termination for both NiCd and NiMH battery applications. Controlling a current-limited or constant-current supply allows the bq2002D/T to be the basis for a cost-effective stand-alone or system-integrated charger. The bq2002D/T integrates fast charge with optional top-off and pulsed-trickle control in a single IC for charging one or more NiCd or NiMH battery cells.

Fast charge is initiated on application of the charging supply or battery replacement. For safety, fast charge is inhibited if the battery temperature and voltage are outside configured limits.

Fast charge is terminated by any of the following:

  • Rate of temperature rise
  • Maximum voltage
  • Maximum temperature
  • Maximum time

After fast charge, the bq2002T optionally tops-off and pulse-trickles the battery per the pre-configured limits. Fast charge may be inhibited using the INH pin. The bq2002D/T may be placed in low-standby-power mode to reduce system power consumption.
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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 NiCD/NiMH Fast-Charge Management ICs 数据表 (Rev. D) 2009年 4月 20日
用户指南 bq2002 Selection Table 2005年 8月 30日

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包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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