ZHCSQP8J December   2008  – June 2022 LM5088 , LM5088-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LM5088
    3. 6.3 ESD Ratings: LM5088-Q1
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Voltage Low-Dropout Regulator
      2. 7.3.2  Line Undervoltage Detector
      3. 7.3.3  Oscillator and Sync Capability
      4. 7.3.4  Error Amplifier and PWM Comparator
      5. 7.3.5  Ramp Generator
      6. 7.3.6  Dropout Voltage Reduction
      7. 7.3.7  Frequency Dithering (LM5088-1 Only)
      8. 7.3.8  Cycle-by-Cycle Current Limit
      9. 7.3.9  Overload Protection Timer (LM5088-2 Only)
      10. 7.3.10 Soft Start
      11. 7.3.11 HG Output
      12. 7.3.12 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 EN Pin Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Timing Resistor
        2. 8.2.2.2  Output Inductor
        3. 8.2.2.3  Current Sense Resistor
        4. 8.2.2.4  Ramp Capacitor
        5. 8.2.2.5  Output Capacitors
        6. 8.2.2.6  Input Capacitors
        7. 8.2.2.7  VCC Capacitor
        8. 8.2.2.8  Bootstrap Capacitor
        9. 8.2.2.9  Soft-Start Capacitor
        10. 8.2.2.10 Output Voltage Divider
        11. 8.2.2.11 UVLO Divider
        12. 8.2.2.12 Restart Capacitor (LM5008-2 Only)
        13. 8.2.2.13 MOSFET Selection
        14. 8.2.2.14 Diode Selection
        15. 8.2.2.15 Snubber Components Selection
        16. 8.2.2.16 Error Amplifier Compensation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Thermal Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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1 特性

  • 具有符合 AEC-Q100 标准的下列特性：
    • 器件温度等级 1：–40°C 至 +125°C 环境工作温度范围
    • 器件 HBM ESD 分类等级 2
    • 器件 CDM ESD 分类等级 C5
  • 仿真电流模式控制
  • 驱动外部高侧 N 沟道 MOSFET
  • 4.5V 至 75V 的超宽输入电压范围
  • 低 IQ 关断和待机模式
  • 高占空比功能可降低压差
  • 展频 EMI 降低 (LM5088-1)
  • 用于过载保护的断续计时器 (LM5088-2)
  • 可调节输出电压从 1.205V 开始，反馈基准精度为 1.5%
  • 宽带宽误差放大器
  • 单个电阻振荡器频率设置
  • 振荡器同步功能
  • 可编程软启动
  • 高压、低压差偏置稳压器
  • 热关断保护
  • 16 引脚 HTSSOP 封装