ZHCSQP8J December   2008  – June 2022 LM5088 , LM5088-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LM5088
    3. 6.3 ESD Ratings: LM5088-Q1
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Voltage Low-Dropout Regulator
      2. 7.3.2  Line Undervoltage Detector
      3. 7.3.3  Oscillator and Sync Capability
      4. 7.3.4  Error Amplifier and PWM Comparator
      5. 7.3.5  Ramp Generator
      6. 7.3.6  Dropout Voltage Reduction
      7. 7.3.7  Frequency Dithering (LM5088-1 Only)
      8. 7.3.8  Cycle-by-Cycle Current Limit
      9. 7.3.9  Overload Protection Timer (LM5088-2 Only)
      10. 7.3.10 Soft Start
      11. 7.3.11 HG Output
      12. 7.3.12 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 EN Pin Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Timing Resistor
        2. 8.2.2.2  Output Inductor
        3. 8.2.2.3  Current Sense Resistor
        4. 8.2.2.4  Ramp Capacitor
        5. 8.2.2.5  Output Capacitors
        6. 8.2.2.6  Input Capacitors
        7. 8.2.2.7  VCC Capacitor
        8. 8.2.2.8  Bootstrap Capacitor
        9. 8.2.2.9  Soft-Start Capacitor
        10. 8.2.2.10 Output Voltage Divider
        11. 8.2.2.11 UVLO Divider
        12. 8.2.2.12 Restart Capacitor (LM5008-2 Only)
        13. 8.2.2.13 MOSFET Selection
        14. 8.2.2.14 Diode Selection
        15. 8.2.2.15 Snubber Components Selection
        16. 8.2.2.16 Error Amplifier Compensation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Thermal Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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8.2.2.14 Diode Selection

A Schottky type re-circulating diode is required for all LM5088 applications. The near ideal reverse recovery current transients and low forward voltage drop are particularly important diode characteristics for high input voltage and low output voltage applications common to LM5088. The diode switching loss is minimized in a Schottky diode because of near ideal reverse recovery. The conduction loss can be approximated by:

Equation 26. Pdc_diode = (1 – D) × IO × VF

where

  • VF is the forward drop of the diode.

The worst case is to assume a short circuit load condition. In this case, the diode carries the output current almost continuously. The reverse breakdown rating must be selected for the maximum input voltage level, plus some additional safety margin to withstand ringing at the SW node. For this application, a 60-V On Semiconductor Schottky diode (MBRB2060) with a specified forward drop of 0.6 V at 7 A at a junction temperature of 50°C was selected. For output loads of 5 A and greater and high input voltage applications, a diode in a D2PAK package is recommended to support the worst case power dissipation.