ZHCSMR1C
october 2019 – september 2021
UCC5870-Q1
PRODUCTION DATA
1
特性
2
应用
3
说明
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Power Ratings
6.6
Insulation Specifications
6.7
Electrical Characteristics
6.8
SPI Timing Requirements
6.9
Switching Characteristics
6.10
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Power Supplies
7.3.1.1
VCC1
7.3.1.2
VCC2
7.3.1.3
VEE2
7.3.1.4
VREG1
7.3.1.5
VREG2
7.3.1.6
VREF
7.3.1.7
Other Internal Rails
7.3.2
Driver Stage
7.3.3
Integrated ADC for Front-End Analog (FEA) Signal Processing
7.3.3.1
AI* Setup
7.3.3.2
ADC Setup and Sampling Modes
7.3.3.2.1
Center Sampling Mode
7.3.3.2.2
Edge Sampling Mode
7.3.3.2.3
Hybrid Mode
7.3.3.3
DOUT Functionality
7.3.4
Fault and Warning Classification
7.3.5
Diagnostic Features
7.3.5.1
Undervoltage Lockout (UVLO) and Overvoltage Lockout (OVLO)
7.3.5.1.1
Built-In Self Test (BIST)
7.3.5.1.1.1
Analog Built-In Self Test (ABIST)
7.3.5.1.1.2
Function BIST
7.3.5.1.1.3
Clock Monitor
7.3.5.1.1.3.1
Clock Monitor Built-In Self Test
7.3.5.2
CLAMP, OUTH, and OUTL Clamping Circuits
7.3.5.3
Active Miller Clamp
7.3.5.4
DESAT based Short Circuit Protection (DESAT)
7.3.5.5
Shunt Resistor based Overcurrent Protection (OCP) and Short Circuit Protection (SCP)
7.3.5.6
Temperature Monitoring and Protection for the Power Transistors
7.3.5.7
Active High Voltage Clamping (VCECLP)
7.3.5.8
Two-Level Turn-Off
7.3.5.9
Soft Turn-Off (STO)
7.3.5.10
Thermal Shutdown (TSD) and Temperature Warning (TWN) of Driver IC
7.3.5.11
Active Short Circuit Support (ASC)
7.3.5.12
Shoot-Through Protection (STP)
7.3.5.13
Gate Voltage Monitoring and Status Feedback
7.3.5.14
VGTH Monitor
7.3.5.15
Cyclic Redundancy Check (CRC)
7.3.5.15.1
Calculating CRC
7.3.5.16
Configuration Data CRC
7.3.5.17
SPI Transfer Write/Read CRC
7.3.5.17.1
SDI CRC Check
7.3.5.17.2
SDO CRC Check
7.3.5.18
TRIM CRC Check
7.4
Device Functional Modes
7.4.1
State 1: RESET
7.4.2
State 2: Configuration 1
7.4.3
State 3: Configuration 2
7.4.4
State 4: Active
7.5
Programming
7.5.1
SPI Communication
7.5.1.1
System Configuration of SPI Communication
7.5.1.1.1
Independent Slave Configuration
7.5.1.1.2
Daisy Chain Configuration
7.5.1.1.3
Address-based Configuration
7.5.1.2
SPI Data Frame
7.5.1.2.1
Writing a Register
7.5.1.2.2
Reading a Register
7.6
Register Maps
7.6.1
UCC5870 Registers
8
Applications and Implementation
8.1
Application Information
8.1.1
Power Dissipation Considerations
8.1.2
Device Addressing
8.2
Typical Application Using Internal ADC Reference and Power FET Sense Current Monitoring
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
VCC1, VCC2, and VEE2 Bypass Capacitors
8.2.2.2
VREF, VREG1, and VREG2 Bypass Capacitors
8.2.2.3
Bootstrap Capacitor (VBST)
8.2.2.4
VCECLP Input
8.2.2.5
External CLAMP Output
8.2.2.6
AI* Inputs
8.2.2.7
OUTH/ OUTL Outputs
8.2.2.8
nFLT* Outputs
8.2.3
Application Curves
8.3
Typical Application Using DESAT Power FET Monitoring
8.3.1
Detailed Design Procedure
8.3.1.1
DESAT Input
8.3.2
Application Curves
9
Power Supply Recommendations
9.1
VCC1 Power Supply
9.2
VCC2 Power Supply
9.3
VEE2 Power Supply
9.4
VREF Supply (Optional)
10
Layout
10.1
Layout Guidelines
10.1.1
Component Placement
10.1.2
Grounding Considerations
10.1.3
High-Voltage Considerations
10.1.4
Thermal Considerations
10.2
Layout Example
11
Device and Documentation Support
11.1
Documentation Support
11.1.1
Related Documentation
11.2
Receiving Notification of Documentation Updates
11.3
支持资源
11.4
Trademarks
11.5
静电放电警告
11.6
术语表
12
Mechanical, Packaging, and Orderable Information
1
特性
分离输出驱动器,以提供峰值为 30A 的拉电流和峰值为 30A 的灌电流
栅极驱动强度动态可调
具有 150ns(最大值)传播延迟和可编程最小脉冲抑制的互锁和击穿保护
支持初级侧和次级侧主动短路 (ASC)
可配置功率晶体管保护
基于 DESAT 的短路保护
基于分流电阻器的过流和短路保护
基于 NTC 的过热保护
在功率晶体管发生故障时提供可编程软关断 (STO) 和两级关断 (2LTOFF) 保护
功能安全合规型
专为功能安全应用开发
提供可使 ISO 26262 系统设计达到 ASIL D 等级的文档
集成型诊断:
针对保护比较器的内置自检 (BIST)
IN+ 至晶体管栅极路径完整性
功率晶体管阈值监测
内部时钟监测
故障警报 (nFLT1) 和警告 (nFLT2) 输出
集成式 4A 有源米勒钳位或可选的米勒钳位晶体管外部驱动器
高级高压钳位控制
内部和外部电源欠压和过压保护
有源输出下拉特性,在低电源或输入悬空的情况下默认输出低电平
提供内核温度检测和过热保护
在 V
CM
= 1000V 时,共模瞬态抗扰度 (CMTI) 的最小值为 100 kV/μs
可通过 SPI 对器件进行重新配置、验证、监控和诊断
用于功率晶体管温度、电压、电流监测的集成式 10 位 ADC
安全相关认证:
符合 UL 1577 标准且长达 1 分钟的
3750
V
RMS
隔离(计划)
具有符合 AEC-Q100 标准的下列特性:
器件温度等级 0:–40°C 至 125°C 环境工作温度
器件 HBM ESD 分类等级 2
器件 CDM ESD 分类等级 C4b