ZHCSIP2E
April 2016 – October 2018
LMG3410R070
,
LMG3411R070
PRODUCTION DATA.
1
特性
2
应用
3
说明
Device Images
简化方框图
高于 100V/ns 时的开关性能
4
修订历史记录
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Parameter Measurement Information
7.1
Switching Parameters
7.1.1
Turn-on Delays
7.1.2
Turn-off Delays
7.1.3
Drain Slew Rate
7.1.4
Turn-on and Turn-off Energy
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Direct-Drive GaN Architecture
8.3.2
Internal Buck-Boost DC-DC Converter
8.3.3
Internal Auxiliary LDO
8.3.4
Fault Detection
8.3.4.1
Over-current Protection
8.3.4.2
Over-Temperature Protection and UVLO
8.3.5
Drive Strength Adjustment
8.4
Device Functional Modes
8.4.1
Low-Power Mode
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.2.1
Slew Rate Selection
9.2.2.1.1
Startup and Slew Rate with Bootstrap High-Side Supply
9.2.2.2
Signal Level-Shifting
9.2.2.3
Buck-Boost Converter Design
9.2.3
Application Curves
9.3
Paralleling GaN Devices
9.4
Do's and Don'ts
10
Power Supply Recommendations
10.1
Using an Isolated Power Supply
10.2
Using a Bootstrap Diode
10.2.1
Diode Selection
10.2.2
Managing the Bootstrap Voltage
10.2.3
Reliable Bootstrap Start-up
11
Layout
11.1
Layout Guidelines
11.1.1
Power Loop Inductance
11.1.2
Signal Ground Connection
11.1.3
Bypass Capacitors
11.1.4
Switch-Node Capacitance
11.1.5
Signal Integrity
11.1.6
High-Voltage Spacing
11.1.7
Thermal Recommendations
11.2
Layout Example
12
器件和文档支持
12.1
器件支持
12.1.1
第三方产品免责声明
12.2
文档支持
12.2.1
相关文档
12.3
接收文档更新通知
12.4
社区资源
12.5
商标
12.6
静电放电警告
12.7
术语表
13
机械、封装和可订购信息
1
特性
TI GaN 工艺通过了实际应用硬开关任务剖面可靠性加速测试
支持高密度电源转换设计
与共源共栅或独立 GaN FET 相比具有卓越的系统性能
低电感 8mm x 8mm QFN 封装简化了设计和布局
可调节驱动强度确保开关性能和 EMI 控制
数字故障状态输出信号
仅需 +12V 非稳压电源
集成栅极驱动器
零共源电感
20ns 传播延迟确保 MHz 级工作频率
工艺经过调整的栅极偏置电压确保可靠性
25 到 100V/ns 的用户可调节压摆率
强大的保护
无需外部保护组件
过流保护,响应时间低于 100ns
压摆率抗扰性高于 150V/ns
瞬态过压抗扰度
过热保护
针对所有电源轨的 UVLO 保护
器件选项
:
LMG3410R070
:锁存过流保护
LMG3411R070
:逐周期过流保护