SLVK099A March   2022  – July 2022 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP


  1.   TPS7H500x-SP Single-Event Effects (SEE)
  2.   Trademarks
  3. Introduction
  4. Single-Event Effects (SEE)
  5. Device and Test Board Information
  6. Irradiation Facility and Setup
  7. Depth, Range, and LETEFF Calculation
  8. Test Setup and Procedures
  9. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  10. Single-Event Transients (SET)
    1. 8.1 System Level Implications
  11. Event Rate Calculations
  12. 10Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References
  15.   C Revision History

TPS7H500x-SP Single-Event Effects (SEE)

The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H500x-SP. Destructive single-event-effects (DSEE) performance was verified at the maximum recommended voltage of 14 V. SET performance was verified over a variety of different operating conditions including: internal and external clock, FSW = 1 and 2 MHz, error amp (in unity gain), and cross conduction. For the transient characterization, input voltages of 4, 12, and 14 V were used (For TPS7H5002/3/4- SP only a nominal VIN of 12V was used). Heavy-ions with LETEFF of 30.5 to 75 MeV·cm2/mg were used during the validation. A total of 11 devices were used for the data collection. Flux of ≈105 ions/cm2·s and fluences of ≈107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H500x-SP is SEL and SEB/SEGR free up to 75 MeV·cm2/mg, at T = 125°C and T = 25°C, respectively, and across the full electrical specifications. SET characterization is presented and discussed for a variety of different operating conditions.