ZHCU578 October   2018

 

  1.    说明
  2.    资源
  3.    特性
  4.    应用
  5.    设计图像
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1 TPS92692-Q1
    3. 2.3 LM74700
    4. 2.4 System Design Theory
      1. 2.4.1 Design Procedure
        1. 2.4.1.1  Operating Parameters, Duty Cycle
        2. 2.4.1.2  Setting the Switching Frequency
        3. 2.4.1.3  Inductor Value Calculation
        4. 2.4.1.4  Peak Inductor Current
        5. 2.4.1.5  Calculating RIS (R9)
        6. 2.4.1.6  Minimum Output Capacitance
        7. 2.4.1.7  Setting the LED Current
        8. 2.4.1.8  Soft-Start Capacitor
        9. 2.4.1.9  Overvoltage Protection (OVP)
        10. 2.4.1.10 Main N-Channel MOSFET Selection
        11. 2.4.1.11 Rectifier Diode Selection
        12. 2.4.1.12 Thermal Protection
      2. 2.4.2 Designing for Low EMI
        1. 2.4.2.1 EMI Performance
        2. 2.4.2.2 EMI Filter Design
          1. 2.4.2.2.1 Additional EMI Considerations
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
    2. 3.2 Testing and Results
      1. 3.2.1 Test Setup
      2. 3.2.2 Test Results
        1. 3.2.2.1 Nominal Operation Waveforms
          1. 3.2.2.1.1 Loop Stability Measurements Block Diagram
        2. 3.2.2.2 Efficiency and Line Regulation: Done for different power level for Boost (Hi Beam and Lo Beam) or Boost to Battery for Lo Beam only
        3. 3.2.2.3 Thermal Scan
  9. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  10. 5Related Documentation
    1. 5.1 商标

Main N-Channel MOSFET Selection

The main switching FET (Q2) needs to be able to stand off the input voltage plus the output voltage, even during output OVP events. This FET must also have a sufficient current rating for this application. The minimum transistor voltage and current rating can be calculated using the following equations:

Equation 13. TIDA-050002 NFET_VD_TID50002.gif
Equation 14. TIDA-050002 NFET_IRMS_TID50002.gif

A 80-V, D2PAK Q-grade FET is chosen for the switching FET (Q3). This FET is chosen for low gate charge along with good thermal dissipation package.