ZHCSSL6C July   2023  – April 2024 TPS7H6003-SP , TPS7H6013-SP , TPS7H6023-SP

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Device Options Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Quality Conformance Inspection
    8. 7.8 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage
      2. 8.3.2  Linear Regulator Operation
      3. 8.3.3  Bootstrap Operation
        1. 8.3.3.1 Bootstrap Charging
        2. 8.3.3.2 Bootstrap Capacitor
        3. 8.3.3.3 Bootstrap Diode
        4. 8.3.3.4 Bootstrap Resistor
      4. 8.3.4  High-Side Driver Startup
      5. 8.3.5  Inputs and Outputs
      6. 8.3.6  Dead Time
      7. 8.3.7  Input Interlock Protection
      8. 8.3.8  Undervoltage Lockout and Power Good (PGOOD)
      9. 8.3.9  Negative SW Voltage Transients
      10. 8.3.10 Level Shifter
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Bootstrap and Bypass Capacitors
        2. 9.2.2.2 Bootstrap Diode
        3. 9.2.2.3 BP5x Overshoot and Undershoot
        4. 9.2.2.4 Gate Resistor
        5. 9.2.2.5 Dead Time Resistor
        6. 9.2.2.6 Gate Driver Losses
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

1 特性

  • 辐射性能：
    • 耐辐射保障 (RHA) 高达
      100krad(Si) 总电离剂量 (TID)
    • 单粒子锁定 (SEL)、单粒子烧毁 (SEB) 和单粒子栅穿 (SEGR) 对于线性能量传递 (LET) 的抗扰度高达 75MeV-cm2/mg
    • 单粒子瞬变 (SET) 和单粒子功能中断 (SEFI) 的特征值高达 LET = 75MeV-cm2/mg
  • 1.3A 峰值拉电流和 2.5A 峰值灌电流
  • 两种工作模式：
    • 具有可调死区时间的单个 PWM 输入
    • 两个独立输入
  • 在独立输入模式下提供可选输入互锁保护
  • 分离输出实现可调的导通和关断时间
  • 独立输入模式下的典型传播延迟为 30ns
  • 5.5ns 典型延迟匹配