ZHCSRI5E February 2008 – June 2025 AMC1203
PRODUCTION DATA
| 参数 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 | |
|---|---|---|---|---|---|---|
| 模拟输入 | ||||||
| CI | AGND 的输入电容 | 3 | pF | |||
| CID | 差分输入电容 | 6 | pF | |||
| RID | 差分输入电阻 | 28 | kΩ | |||
| IIL | 输入漏电流 | INN = INP = AGND | -5 | 5 | nA | |
| CMTI | 共模瞬态抗扰度 | 15 | kV/μs | |||
| CMRR | 共模抑制比 | INP = INN,直流, VCM min ≤ VIN ≤ VCM max |
92 | dB | ||
| INP = INN,交流高达 10kHz, VCM min ≤ VIN ≤ VCM max |
105 | |||||
| 直流精度 | ||||||
| DNL | 微分非线性 | 分辨率:16 位 | -0.99 | 0.99 | LSB | |
| INL | 积分非线性(2) | 分辨率:16 位,AMC1203 | -9 | ±3 | 9 | LSB |
| 分辨率:16 位,AMC1203B | -6 | ±2 | 6 | |||
| EO | 失调电压误差(1)(6) | INP = INN = AGND | -1 | ±0.1 | 1 | mV |
| TCEO | 失调电压误差温漂(3) | -5 | 5 | µV/°C | ||
| EG | 增益误差 | TA = 25°C,AMC1203 | -2% | ±0.2% | 2% | |
| TA = 25°C,AMC1203B | -1% | ±0.2% | 1% | |||
| TCEG | 增益误差温漂(4) | ±20 | ppm/°C | |||
| PSRR | 电源抑制比 | INP = INN = AGND, 4.5V ≤ AVDD ≤ 5.5V, 10kHz,100mV 纹波 |
80 | dB | ||
| 交流精度 | ||||||
| SNR | 信噪比 | fIN = 1kHz | 80.5 | 85 | dB | |
| SINAD | 信噪比 + 失真 | fIN = 1kHz | 80 | 85 | dB | |
| THD | 总谐波失真(5) | fIN = 1kHz,AMC1203 | -92 | -84.5 | dB | |
| fIN = 1kHz,AMC1203B | -95 | -88 | ||||
| SFDR | 无杂散动态范围 | fIN = 1kHz,AMC1203 | 86 | 92 | dB | |
| fIN = 1kHz,AMC1203B | 89 | 95 | ||||
| CMOS 逻辑电平(采用施密特触发时) | ||||||
| VOH | 高电平输出电压 | IOH = -4mA | DVDD – 0.4 | V | ||
| IOH = -8mA | DVDD – 0.8 | |||||
| VOL | 低电平输出电压 | IOL = 4mA | 0.4 | V | ||
| IOL = 8mA | 0.8 | |||||
| 电源 | ||||||
| IAVDD | 高侧电源电流 | 6 | 8 | mA | ||
| IDVDD | 低侧电源电流 | 10 | 12 | mA | ||