无线微处理器
超低功耗传感器控制器
低功耗
无线协议支持
高性能无线电
法规遵从性
MCU 外设
信息安全机制
开发工具和软件
工作温度范围
封装
SimpleLink™ CC1352P7 器件是一款多协议、多频带 Sub-1GHz 和 2.4GHz 无线微控制器 (MCU),支持以下协议:Thread、Zigbee®、低功耗 Bluetooth® 5.2、IEEE 802.15.4g、支持 IPv6 的智能对象 (6LoWPAN)、mioty®、Wi-SUN®、专有系统(包括 TI 15.4-Stack(Sub-1GHz 和 2.4GHz))和通过动态多协议管理器 (DMM) 驱动程序实现的并发多协议。CC1352P7 基于 Arm® Cortex® M4F 主处理器,针对电网基础设施、楼宇自动化、零售自动化、个人电子产品和医疗应用中的低功耗无线通信和高级传感功能进行了优化。
CC1352P7 具有由 Arm® Cortex®-M0 驱动的软件定义无线电,支持多个物理层和射频标准。 CC1352P7 支持在 287MHz 至 351MHz、359MHz 至 527MHz、861MHz 至 1054MHz、1076MHz 至 1315MHz 以及 2360MHz 至 2500MHz 频带内运行。通过动态多协议管理器 (DMM) 驱动程序,可在运行时完成 PHY 和频带切换。CC1352P7 具有高效的内置 PA,在 2.4GHz 频带中 TX 支持 +10dBm (21mA) 和 +20dBm (101mA) 的输出功率,在 Sub-1GHz 频带中 TX 支持 +20dBm (64mA) 的输出功率。
在保持 144KB RAM 时,CC1352P7 具有 0.9μA 的低待机电流。除了 Cortex® M4F 主处理器,该器件还具有能够实现快速唤醒功能的自主式超低功耗传感器控制器 CPU。例如,传感器控制器能够在系统电流为 1µA 时进行 1Hz ADC 采样。
CC1352P7 具有低 SER(软错误率)FIT(时基故障),可延长运行寿命。SRAM 奇偶校验功能始终开启,可更大程度地降低因潜在辐射事件导致的损坏风险。许多客户对产品生命周期的要求为 10 至 15 年或者更久,为了达到这一目标,TI 制定了产品生命周期政策,对产品的寿命和供货连续性作出承诺。
CC1352P7 器件是 SimpleLink™ MCU 平台的一部分,包括 Wi-Fi®、低功耗 Bluetooth®、Thread、Zigbee、Wi-SUN®、Amazon Sidewalk、mioty®、Sub-1GHz MCU 和主机 MCU。 CC1352P7 是可扩展产品系列(闪存为 32KB 至 704KB)的一部分,具有引脚对引脚兼容的封装选项。通用 SimpleLink™ CC13xx 和 CC26xx 软件开发套件 (SDK) 及 SysConfig 系统配置工具支持产品系列中各器件之间的迁移。SDK 随附了丰富的软件栈、应用示例和 SimpleLink™ Academy 培训课程。有关更多信息,请查看无线连接。
器件型号(1) | 封装 | 封装尺寸(标称值) |
---|---|---|
CC1352P74T0RGZR | VQFN (48) | 7.00mm × 7.00mm |
DATE | REVISION | NOTES |
---|---|---|
November 2021 | * | Initial Release |
DEVICE | RADIO SUPPORT | FLASH (KB) |
RAM (KB) |
GPIO | PACKAGE SIZE |
---|---|---|---|---|---|
CC1310 | Sub-1 GHz Wireless M-Bus |
32-128 | 16-20 | 10-30 | RGZ (7-mm ×
7-mm VQFN48) RHB (5 mm × 5 mm VQFN32) RSM (4 mm × 4 mm VQFN32) |
CC1312R | Sub-1 GHz Wi-SUN® Amazon Sidewalk Wireless M-Bus |
352-704 | 80-144 | 30 | RGZ (7-mm × 7-mm VQFN48) |
CC1352P | Multiprotocol Sub-1 GHz Wi-SUN® Amazon Sidewalk Wireless M-Bus Bluetooth 5.2 Low Energy Zigbee Thread 2.4 GHz proprietary FSK-based formats +20-dBm high-power amplifier |
352-704 | 80-144 | 26 | RGZ (7-mm × 7-mm VQFN48) |
CC1352R | Multiprotocol Sub-1 GHz Wi-SUN® Wireless M-Bus Bluetooth 5.2 Low Energy Zigbee Thread 2.4 GHz proprietary FSK-based formats |
352 | 80 | 28 | RGZ (7-mm × 7-mm VQFN48) |
CC2642R | Bluetooth
5.2 Low Energy 2.4 GHz proprietary FSK-based formats |
352 | 80 | 31 | RGZ (7-mm × 7-mm VQFN48) |
CC2642R-Q1 | Bluetooth 5.2 Low Energy | 352 | 80 | 31 | RTC (7-mm × 7-mm VQFN48) |
CC2652R | Multiprotocol Bluetooth 5.2 Low Energy Zigbee Thread 2.4 GHz proprietary FSK-based formats |
352-704 | 80-144 | 31 | RGZ (7-mm × 7-mm VQFN48) |
CC2652RB | Multiprotocol Bluetooth 5.2 Low Energy Zigbee Thread |
352 | 80 | 31 | RGZ (7-mm × 7-mm VQFN48) |
CC2652P | Multiprotocol Bluetooth 5.2 Low Energy Zigbee Thread 2.4 GHz proprietary FSK-based formats +19.5-dBm high-power amplifier |
352-704 | 80-144 | 26 | RGZ (7-mm × 7-mm VQFN48) |
The following I/O pins marked in Figure 6-1 in bold have high-drive capabilities:
The following I/O pins marked in Figure 6-1 in italics have analog capabilities:
PIN | I/O | TYPE | DESCRIPTION | |
---|---|---|---|---|
NAME | NO. | |||
DCDC_SW | 33 | — | Power | Output from internal DC/DC converter(1) |
DCOUPL | 23 | — | Power | For decoupling of internal 1.27 V regulated digital-supply (2) |
DIO_5 | 10 | I/O | Digital | GPIO, high-drive capability |
DIO_6 | 11 | I/O | Digital | GPIO, high-drive capability |
DIO_7 | 12 | I/O | Digital | GPIO, high-drive capability |
DIO_8 | 14 | I/O | Digital | GPIO |
DIO_9 | 15 | I/O | Digital | GPIO |
DIO_10 | 16 | I/O | Digital | GPIO |
DIO_11 | 17 | I/O | Digital | GPIO |
DIO_12 | 18 | I/O | Digital | GPIO |
DIO_13 | 19 | I/O | Digital | GPIO |
DIO_14 | 20 | I/O | Digital | GPIO |
DIO_15 | 21 | I/O | Digital | GPIO |
DIO_16 | 26 | I/O | Digital | GPIO, JTAG_TDO, high-drive capability |
DIO_17 | 27 | I/O | Digital | GPIO, JTAG_TDI, high-drive capability |
DIO_18 | 28 | I/O | Digital | GPIO |
DIO_19 | 29 | I/O | Digital | GPIO |
DIO_20 | 30 | I/O | Digital | GPIO |
DIO_21 | 31 | I/O | Digital | GPIO |
DIO_22 | 32 | I/O | Digital | GPIO |
DIO_23 | 36 | I/O | Digital or Analog | GPIO, analog capability |
DIO_24 | 37 | I/O | Digital or Analog | GPIO, analog capability |
DIO_25 | 38 | I/O | Digital or Analog | GPIO, analog capability |
DIO_26 | 39 | I/O | Digital or Analog | GPIO, analog capability |
DIO_27 | 40 | I/O | Digital or Analog | GPIO, analog capability |
DIO_28 | 41 | I/O | Digital or Analog | GPIO, analog capability |
DIO_29 | 42 | I/O | Digital or Analog | GPIO, analog capability |
DIO_30 | 43 | I/O | Digital or Analog | GPIO, analog capability |
EGP | — | — | GND | Ground – exposed ground pad(3) |
JTAG_TMSC | 24 | I/O | Digital | JTAG TMSC, high-drive capability |
JTAG_TCKC | 25 | I | Digital | JTAG TCKC |
RESET_N | 35 | I | Digital | Reset, active low. No internal pullup resistor |
RF_P_2_4GHZ | 1 | — | RF | Positive 2.4-GHz RF input signal to LNA during RX Positive 2.4-GHz RF output signal from PA during TX |
RF_N_2_4GHZ | 2 | — | RF | Negative 2.4-GHz RF input signal to LNA during RX Negative 2.4-GHz RF output signal from PA during TX |
RF_P_SUB_1GHZ | 3 | — | RF | Positive Sub-1 GHz RF input signal to LNA during RX Positive Sub-1 GHz RF output signal from PA during TX |
RF_N_SUB_1GHZ | 4 | — | RF | Negative Sub-1 GHz RF input signal to LNA during RX Negative Sub-1 GHz RF output signal from PA during TX |
RX_TX | 7 | — | RF | Optional bias pin for the RF LNA |
TX_20DBM_P | 5 | — | RF | Positive Sub-1 GHz or 2.4-GHz high-power TX signal |
TX_20DBM_N | 6 | — | RF | Negative Sub-1 GHz or 2.4-GHz high-power TX signal |
VDDR | 45 | — | Power | Internal supply, must be powered from the internal DC/DC converter or the internal LDO(2)(4)(6) |
VDDR_RF | 48 | — | Power | Internal supply, must be powered from the internal DC/DC converter or the internal LDO(2)(5)(6) |
VDDS | 44 | — | Power | 1.8-V to 3.8-V main chip supply(1) |
VDDS2 | 13 | — | Power | 1.8-V to 3.8-V DIO supply(1) |
VDDS3 | 22 | — | Power | 1.8-V to 3.8-V DIO supply(1) |
VDDS_DCDC | 34 | — | Power | 1.8-V to 3.8-V DC/DC converter supply |
X48M_N | 46 | — | Analog | 48-MHz crystal oscillator pin 1 |
X48M_P | 47 | — | Analog | 48-MHz crystal oscillator pin 2 |
X32K_Q1 | 8 | — | Analog | 32-kHz crystal oscillator pin 1 |
X32K_Q2 | 9 | — | Analog | 32-kHz crystal oscillator pin 2 |
FUNCTION | SIGNAL NAME | PIN NUMBER | ACCEPTABLE PRACTICE(1) | PREFERRED PRACTICE(1) |
---|---|---|---|---|
GPIO | DIO_n | 10–12 14–21 26–32 36–43 | NC or GND | NC |
32.768-kHz crystal | X32K_Q1 | 8 | NC or GND | NC |
X32K_Q2 | 9 | |||
DC/DC converter(2) | DCDC_SW | 33 | NC | NC |
VDDS_DCDC | 34 | VDDS | VDDS |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VDDS(3) | Supply voltage | –0.3 | 4.1 | V | |
Voltage on any digital pin(4) | –0.3 | VDDS + 0.3, max 4.1 | V | ||
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X48M_N and X48M_P | –0.3 | VDDR + 0.3, max 2.25 | V | ||
Vin | Voltage on ADC input | Voltage scaling enabled | –0.3 | VDDS | V |
Voltage scaling disabled, internal reference | –0.3 | 1.49 | |||
Voltage scaling disabled, VDDS as reference | –0.3 | VDDS / 2.9 | |||
Input level, Sub-1 GHz RF pins (RF_P_SUB_1GHZ and RF_N_SUB_1GHZ) | 10 | dBm | |||
Input level, 2.4 GHz RF pins (RF_P_2_4GHZ and RF_N_2_4GHZ) | 5 | dBm | |||
Tstg | Storage temperature | –40 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
VESD | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1) | All pins | ±2000 | V |
Charged device model (CDM), per JESD22-C101(2) | All pins | ±500 | V |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Operating ambient temperature(1)(3) | –40 | 105 | °C | |
Operating junction temperaturehrefhref | –40 | 115 | °C | |
Operating supply voltage (VDDS) | 1.8 | 3.8 | V | |
Operating supply voltage (VDDS), boost mode |
VDDR = 1.95 V +14 dBm RF output sub-1 GHz power amplifier |
2.1 | 3.8 | V |
Rising supply voltage slew rate | 0 | 100 | mV/µs | |
Falling supply voltage slew rate(2) | 0 | 20 | mV/µs |
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
VDDS Power-on-Reset (POR) threshold | 1.1 - 1.55 | V | |||
VDDS Brown-out Detector (BOD) (1) | Rising threshold | 1.77 | V | ||
VDDS Brown-out Detector (BOD), before initial boot (2) | Rising threshold | 1.70 | V | ||
VDDS Brown-out Detector (BOD) (1) | Falling threshold | 1.75 | V |
PARAMETER | TEST CONDITIONS | TYP | UNIT | |
---|---|---|---|---|
Core Current Consumption | ||||
Icore | Reset and Shutdown | Reset. RESET_N pin asserted or VDDS below power-on-reset threshold | 110 | nA |
Shutdown. No clocks running, no retention | 110 | |||
Standby without cache retention |
RTC running, CPU,
144KB RAM and (partial) register retention. RCOSC_LF |
0.8 | µA | |
RTC running, CPU,
64KB RAM and (partial) register retention. RCOSC_LF |
0.7 | µA | ||
RTC running, CPU,
144KB RAM and (partial) register retention XOSC_LF |
0.9 | µA | ||
Standby with cache retention |
RTC running, CPU,
144KB RAM and (partial) register retention. RCOSC_LF |
1.9 | µA | |
RTC running, CPU,
144KB RAM and (partial) register retention. XOSC_LF |
2.0 | µA | ||
Idle | Supply Systems and
RAM powered RCOSC_HF |
590 | µA | |
Active | MCU running
CoreMark at 48 MHz RCOSC_HF |
2.63 | mA | |
Peripheral Current Consumption | ||||
Iperi | Peripheral power domain | Delta current with domain enabled | 39 | µA |
Serial power domain | Delta current with domain enabled | 2.6 | ||
RF Core | Delta current with
power domain enabled, clock enabled, RF core idle |
89 | ||
µDMA | Delta current with clock enabled, module is idle | 57 | ||
Timers | Delta current with clock enabled, module is idle(3) | 97 | ||
I2C | Delta current with clock enabled, module is idle | 9.2 | ||
I2S | Delta current with clock enabled, module is idle | 22 | ||
SSI | Delta current with clock enabled, module is idle(2) | 50 | ||
UART | Delta current with clock enabled, module is idle(1) | 110 | ||
CRYPTO (AES) | Delta current with clock enabled, module is idle | 16 | ||
PKA | Delta current with clock enabled, module is idle | 59 | ||
TRNG | Delta current with clock enabled, module is idle | 20 | ||
Sensor Controller Engine Consumption | ||||
ISCE | Active mode | 24 MHz, infinite loop | 701 | µA |
Low-power mode | 2 MHz, infinite loop | 25.2 |
PARAMETER | TEST CONDITIONS | TYP | UNIT | |
---|---|---|---|---|
Radio receive current, 868 MHz | 5.4 | mA | ||
Radio receive current, 2.44 GHz (Bluetooth Low Energy) | VDDS = 3.0 V | 7.1 | mA | |
Radio transmit current Sub-1 GHz PA |
0 dBm output power setting 868 MHz |
8.0 | mA | |
+10 dBm output power setting 868 MHz |
14.3 | mA | ||
Radio transmit current Boost mode, Sub-1 GHz PA |
+14 dBm output power setting 868 MHz |
24.9 | mA | |
Radio transmit current 2.4 GHz PA (Bluetooth Low Energy) |
0 dBm output power setting, VDDS = 3.0 V | 7.5 | mA | |
Radio transmit current 2.4 GHz PA (Bluetooth Low Energy) |
+5 dBm output power setting 2440 MHz, VDDS = 3.0 V |
9.8 | mA | |
Radio transmit current High-power PA |
Transmit (TX), +20 dBm output power setting 915 MHz, VDDS = 3.3 V |
64 | mA | |
Radio transmit current High-power PA(1) |
Transmit (TX), +20 dBm output power setting 2440 MHz (Bluetooth Low Energy), VDDS = 3.0 V |
101 | mA | |
Radio transmit current High-power PA, 10 dBm configuration(2) |
Transmit (TX), +10 dBm output power setting 2440 MHz (Bluetooth Low Energy), VDDS = 3.0 V |
21 | mA |