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  • TMUX7219 具有 1.8V 逻辑电平和闩锁效应抑制特性的 44V 2:1 (SPDT) 精密开关

    • ZHCSMO5F November   2020  – July 2024 TMUX7219

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  • TMUX7219 具有 1.8V 逻辑电平和闩锁效应抑制特性的 44V 2:1 (SPDT) 精密开关
  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Continuous Current
    6. 5.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 5.7  ±15 V Dual Supply: Switching Characteristics 
    8. 5.8  ±20 V Dual Supply: Electrical Characteristics
    9. 5.9  ±20 V Dual Supply: Switching Characteristics
    10. 5.10 44 V Single Supply: Electrical Characteristics 
    11. 5.11 44 V Single Supply: Switching Characteristics 
    12. 5.12 12 V Single Supply: Electrical Characteristics 
    13. 5.13 12 V Single Supply: Switching Characteristics 
    14. 5.14 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  Transition Time
    5. 6.5  tON(EN) and tOFF(EN)
    6. 6.6  Break-Before-Make
    7. 6.7  tON (VDD) Time
    8. 6.8  Propagation Delay
    9. 6.9  Charge Injection
    10. 6.10 Off Isolation
    11. 6.11 Crosstalk
    12. 6.12 Bandwidth
    13. 6.13 THD + Noise
    14. 6.14 Power Supply Rejection Ratio (PSRR)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail-to-Rail Operation
      3. 7.3.3 1.8 V Logic Compatible Inputs
      4. 7.3.4 Integrated Pull-Up and Pull-Down Resistor on Logic Pins
      5. 7.3.5 Fail-Safe Logic
      6. 7.3.6 Latch-Up Immune
      7. 7.3.7 Ultra-Low Charge Injection
    4. 7.4 Device Functional Modes
    5. 7.5 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Power Amplifier Gate Driver
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Ultrasonic Sensing Gas Meter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
  15. 重要声明
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Data Sheet

TMUX7219 具有 1.8V 逻辑电平和闩锁效应抑制特性的 44V 2:1 (SPDT) 精密开关

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

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1 特性

  • 闩锁效应抑制
  • 双电源电压范围：±4.5V 至 ±22V
  • 单电源电压范围：4.5V 至 44V
  • 低导通电阻：2.1Ω
  • 低电荷注入：−10pC
  • 大电流支持：330mA（最大值）(VSSOP)
  • 大电流支持：440mA（最大值）(WSON)
  • –40°C 至 +125°C 工作温度
  • 兼容 1.8V 逻辑电平
  • 失效防护逻辑
  • 轨到轨运行
  • 双向信号路径
  • 先断后合开关

2 应用

  • 工厂自动化和工业控制
  • 可编程逻辑控制器 (PLC)
  • 模拟输入模块
  • 半导体测试
  • 交流充电（桩）站
  • 超声波扫描仪
  • 患者监护和诊断
  • 光纤网络
  • 光学测试设备
  • 远程无线电单元
  • 有线网络
  • 数据采集系统
  • 燃气表
  • 流量变送器

3 说明

TMUX7219 是一款具有闩锁效应抑制特性的互补金属氧化物半导体 (CMOS) 开关，采用单通道 2:1 (SPDT) 配置。此器件在单电源（4.5V 至 44 V）、双电源（±4.5V 至 ±22V）或非对称电源（例如 VDD = 12V，VSS = –5V）供电时均能正常运行。TMUX7219 可在源极 (Sx) 和漏极 (D) 引脚上支持从 VSS 到 VDD 范围的双向模拟和数字信号。

可以通过控制 EN 引脚来启用或禁用 TMUX7219。当禁用时，两个信号路径开关都被关闭。当启用时，SEL 引脚可用于打开信号路径 1（S1 至 D）或信号路径 2（S2 至 D）。所有逻辑控制输入均支持 1.8V 到 VDD 的逻辑电平，因此，当器件在有效电源电压范围内运行时，可确保 TTL 和 CMOS 逻辑兼容性。失效防护逻辑电路允许先在控制引脚上施加电压，然后在电源引脚上施加电压，从而保护器件免受潜在的损害。

TMUX72xx 系列具有闩锁效应抑制特性，可防止器件内寄生结构之间通常由过压事件引起的大电流不良事件。闩锁状态通常会一直持续到电源轨关闭为止，并可能导致器件失效。闩锁效应抑制特性使得 TMUX72xx 系列开关和多路复用器能够在恶劣的环境中使用。

器件信息
器件型号 封装 (1) 本体尺寸（标称值）
TMUX7219 VSSOP (8) DGK 3.00mm × 3.00mm
WSON (8) RQX 3.00mm × 2.00mm
(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。
TMUX7219 功能方框图功能方框图

4 Pin Configuration and Functions

TMUX7219 DGK Package, 8-Pin VSSOP (Top View)Figure 4-1 DGK Package,
8-Pin VSSOP
(Top View)
TMUX7219 RQX Package, 8-Pin WSON (Top View)Figure 4-2 RQX Package,
8-Pin WSON
(Top View)
Table 4-1 Pin Functions
PIN TYPE(1) DESCRIPTION(2)
NAME RQX DGK
D 1 1 I/O Drain pin. Can be an input or output.
S1 2 2 I/O Source pin 1. Can be an input or output.
GND 3 3 P Ground (0 V) reference
VDD 4 4 P Positive power supply. This pin is the most positive power-supply potential. For reliable operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VDD and GND.
EN 5 5 I Active high logic enable, has internal pull-up resistor. When this pin is low, all switches are turned off. When this pin is high, the SEL logic input determine which switch is turned on.
SEL 6 6 I Logic control input, has internal pull-down resistor. Controls the switch connection as shown in Section 7.5.
VSS 7 7 P Negative power supply. This pin is the most negative power-supply potential. In single-supply applications, this pin can be connected to ground. For reliable operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VSS and GND.
S2 8 8 I/O Source pin 2. Can be an input or output.
Thermal Pad — — The thermal pad is not connected internally. There is no requirement to electrically connect this pad. If connected, it is recommended that the pad be left floating or tied to GND.
(1) I = input, O = output, I/O = input and output, P = power.
(2) Refer to Section 7.4 for what to do with unused pins.

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(3)
MIN MAX UNIT
VDD – VSS Supply voltage 48 V
VDD –0.5 48 V
VSS –48 0.5 V
VSEL or VEN Logic control input pin voltage (SEL, EN)(3) –0.5 48 V
ISEL or IEN Logic control input pin current (SEL, EN)(3) –30 30 mA
VS or VD Source or drain voltage (Sx, D)(3) VSS–0.5 VDD+0.5 V
IIK  Diode clamp current(3) –30 30 mA
IS or ID (CONT) Source or drain continuous current (Sx, D) IDC + 10 %(4) mA
TA Ambient temperature –55 150 °C
Tstg Storage temperature –65 150 °C
TJ Junction temperature 150 °C
Ptot Total power dissipation (DGK Package) (5) 460 mW
Total power dissipation (RQX Package) (6) 1110 mW
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) Pins are diode-clamped to the power-supply rails. Over voltage signals must be voltage and current limited to maximum ratings.
(4) Refer to Source or Drain Continuous Current table for IDC specifications.
(5) For DGK package: Ptot derates linearily above TA = 70°C by 6.7mW/°C.
(6) For RQX package: Ptot derates linearily above TA = 70°C by 16mW/°C.

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), ANSI/ESDA/JEDEC JS-002, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Thermal Information

THERMAL METRIC(1) TMUX7219 TMUX7219 UNIT
DGK (VSSOP) RQX (WSON)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 152.1 62.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 48.4 54.0 °C/W
RθJB Junction-to-board thermal resistance
73.2

 31.0 °C/W
ΨJT Junction-to-top characterization parameter
4.1

 0.8 °C/W
ΨJB Junction-to-board characterization parameter
71.8

 30.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 23.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

5.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD – VSS(1) Power supply voltage differential 4.5 44 V
VDD Positive power supply voltage 4.5 44 V
VS or VD Signal path input/output voltage (source or drain pin) (Sx, D) VSS VDD V
VSEL or VEN Address or enable pin voltage 0 44 V
IS or ID (CONT) Source or drain continuous current (Sx, D) IDC(2) mA
TA Ambient temperature –40 125 °C
(1) VDD and VSS can be any value as long as 4.5 V ≤ (VDD – VSS) ≤ 44 V, and the minimum VDD is met.
(2) Refer to Source or Drain Continuous Current table for IDC specifications.

5.5 Source or Drain Continuous Current

at supply voltage of VDD ± 10%, VSS ± 10 % (unless otherwise noted)
CONTINUOUS CURRENT PER CHANNEL (IDC) TA = 25°C TA = 85°C TA = 125°C UNIT
PACKAGE TEST CONDITIONS
RQX (WSON) +44 V Single Supply(1) 440 270 130 mA
±15 V Dual Supply 440 270 130 mA
+12 V Single Supply 330 200 105 mA
±5 V Dual Supply 330 200 105 mA
+5 V Single Supply 230 140 90 mA
DGK (VSSOP) +44 V Single Supply(1) 330 210 120 mA
±15 V Dual Supply 330 210 120 mA
+12 V Single Supply 240 160 100 mA
±5 V Dual Supply 240 160 100 mA
+5 V Single Supply 180 120 80 mA
(1) Specified for nominal supply voltage only.

5.6 ±15 V Dual Supply: Electrical Characteristics 

VDD = +15 V ± 10%, VSS = –15 V ±10%, GND = 0 V (unless otherwise noted) 
Typical at VDD = +15 V, VSS = –15 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = –10 V to +10 V
ID = –10 mA
Refer to On-Resistance		 25°C 2.1 2.9 Ω
–40°C to +85°C 3.8 Ω
–40°C to +125°C 4.5 Ω
ΔRON On-resistance mismatch between channels VS = –10 V to +10 V
ID = –10 mA
Refer to On-Resistance		 25°C 0.05 0.25 Ω
–40°C to +85°C 0.3 Ω
–40°C to +125°C 0.35 Ω
RON FLAT On-resistance flatness VS = –10 V to +10 V
IS = –10 mA
Refer to On-Resistance		 25°C 0.5 0.6 Ω
–40°C to +85°C 0.7 Ω
–40°C to +125°C 0.85 Ω
RON DRIFT On-resistance drift VS = 0 V, IS = –10 mA
Refer to On-Resistance		 –40°C to +125°C 0.01 Ω/°C
IS(OFF) Source off leakage current(1) VDD = 16.5 V, VSS = –16.5 V
Switch state is off
VS = +10 V / –10 V
VD = –10 V / + 10 V
Refer to Off-Leakage Current		 25°C –0.15 0.05 0.15 nA
–40°C to +85°C –1.6 1.6 nA
–40°C to +125°C –15 15 nA
ID(OFF) Drain off leakage current(1) VDD = 16.5 V, VSS = –16.5 V
Switch state is off
VS = +10 V / –10 V
VD = –10 V / + 10 V
Refer to Off-Leakage Current		 25°C –1 0.05 1 nA
–40°C to +85°C –3 3 nA
–40°C to +125°C –26 26 nA
IS(ON)
ID(ON)		 Channel on leakage current(2) VDD = 16.5 V, VSS = –16.5 V
Switch state is on
VS = VD = ±10 V
Refer to On-Leakage Current		 25°C –1 0.04 1 nA
–40°C to +85°C –1.8 1.8 nA
–40°C to +125°C –18 18 nA
LOGIC INPUTS (SEL / EN pins)
VIH Logic voltage high –40°C to +125°C 1.3 44 V
VIL Logic voltage low –40°C to +125°C 0 0.8 V
IIH Input leakage current –40°C to +125°C 0.005 2 µA
IIL Input leakage current –40°C to +125°C –1 –0.005 µA
CIN Logic input capacitance –40°C to +125°C 3 pF
POWER SUPPLY
IDD VDD supply current VDD = 16.5 V, VSS = –16.5 V
Logic inputs = 0 V, 5 V, or VDD		 25°C 30 40 µA
–40°C to +85°C 48 µA
–40°C to +125°C 62 µA
ISS VSS supply current VDD = 16.5 V, VSS = –16.5 V
Logic inputs = 0 V, 5 V, or VDD		 25°C 3 10 µA
–40°C to +85°C 15 µA
–40°C to +125°C 25 µA
(1) When VS is positive, VD is negative, or when VS is negative, VD is positive.
(2) When VS is at a voltage potential, VD is floating, or when VD is at a voltage potential, VS is floating.

5.7 ±15 V Dual Supply: Switching Characteristics 

VDD = +15 V ± 10%, VSS = –15 V ±10%, GND = 0 V (unless otherwise noted) 
Typical at VDD = +15 V, VSS = –15 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
tTRAN Transition time from control input VS = 10 V
RL = 300 Ω, CL = 35 pF
Refer to Transition Time		 25°C 120 175 ns
–40°C to +85°C 190 ns
–40°C to +125°C 210 ns
tON (EN) Turn-on time from enable VS = 10 V
RL = 300 Ω, CL = 35 pF
Refer to Turn-on and Turn-off Time		 25°C 100 170 ns
–40°C to +85°C 185 ns
–40°C to +125°C 200 ns
tOFF (EN) Turn-off time from enable VS = 10 V
RL = 300 Ω, CL = 35 pF
Refer to Turn-on and Turn-off Time		 25°C 100 180 ns
–40°C to +85°C 195 ns
–40°C to +125°C 210 ns
tBBM Break-before-make time delay VS = 10 V,
RL = 300 Ω, CL = 35 pF
Refer to Break-Before-Make		 25°C 50 ns
–40°C to +85°C 1 ns
–40°C to +125°C 1 ns
TON (VDD) Device turn on time
(VDD to output)		 VDD rise time = 100ns 
RL = 300 Ω, CL = 35 pF
Refer to Turn-on (VDD) Time		 25°C 0.19 ms
–40°C to +85°C 0.2 ms
–40°C to +125°C 0.2 ms
tPD Propagation delay RL = 50 Ω , CL = 5 pF
Refer to Propagation Delay		 25°C 700 ps
QINJ Charge injection VD = 0 V, CL = 1 nF
Refer to Charge Injection		 25°C –10 pC
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 100 kHz
Refer to Off Isolation		 25°C –75 dB
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1 MHz
Refer to Off Isolation		 25°C –55 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 100 kHz
Refer to Crosstalk		 25°C –117 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1MHz
Refer to Crosstalk		 25°C –106 dB
BW –3dB Bandwidth RL = 50 Ω , CL = 5 pF
VS = 0 V
Refer to Bandwidth		 25°C 40 MHz
IL Insertion loss RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1 MHz		 25°C –0.18 dB
ACPSRR AC Power Supply Rejection Ratio VPP = 0.62 V on VDD and VSS
RL = 50 Ω , CL = 5 pF,
f = 1 MHz
Refer to ACPSRR		 25°C –64 dB
THD+N Total Harmonic Distortion + Noise VPP = 15 V, VBIAS = 0 V
RL  =  10 kΩ , CL = 5 pF,
f = 20 Hz to 20 kHz
Refer to THD + Noise		 25°C 0.0005 %
CS(OFF) Source off capacitance VS = 0 V, f = 1 MHz 25°C 33 pF
CD(OFF) Drain off capacitance VS = 0 V, f = 1 MHz 25°C 48 pF
CS(ON),
CD(ON)		 On capacitance VS = 0 V, f = 1 MHz 25°C 148 pF

5.8 ±20 V Dual Supply: Electrical Characteristics

VDD = +20 V ± 10%, VSS = –20 V ±10%, GND = 0 V (unless otherwise noted) 
Typical at VDD = +20 V, VSS = –20 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = –15 V to +15 V
ID = –10 mA
Refer to On-Resistance		 25°C 1.9 2.7 Ω
–40°C to +85°C 3.5 Ω
–40°C to +125°C 4.2 Ω
ΔRON On-resistance mismatch between channels VS = –15 V to +15 V
ID = –10 mA
Refer to On-Resistance		 25°C 0.04 0.22 Ω
–40°C to +85°C 0.28 Ω
–40°C to +125°C 0.3 Ω
RON FLAT On-resistance flatness VS = –15 V to +15 V
IS = –10 mA
Refer to On-Resistance		 25°C 0.3 0.75 Ω
–40°C to +85°C 0.9 Ω
–40°C to +125°C 1.2 Ω
RON DRIFT On-resistance drift VS = 0 V, IS = –10 mA
Refer to On-Resistance		 –40°C to +125°C 0.009 Ω/°C
IS(OFF) Source off leakage current(1) VDD = 22 V, VSS = –22 V
Switch state is off
VS = +15 V / –15 V
VD = –15 V / + 15 V
Refer to Off-Leakage Current		 25°C –1.5 0.05 1.5 nA
–40°C to +85°C –4 4 nA
–40°C to +125°C –24 24 nA
ID(OFF) Drain off leakage current(1) VDD = 22 V, VSS = –22 V
Switch state is off
VS = +15 V / –15 V
VD = –15 V / + 15 V
Refer to Off-Leakage Current		 25°C –2 0.1 2 nA
–40°C to +85°C –8 8 nA
–40°C to +125°C –44 44 nA
IS(ON)
ID(ON)		 Channel on leakage current(2) VDD = 22 V, VSS = –22 V
Switch state is on
VS = VD = ±15 V
Refer to On-Leakage Current		 25°C –2 0.1 2 nA
–40°C to +85°C –5 5 nA
–40°C to +125°C –29 29 nA
LOGIC INPUTS (SEL / EN pins)
VIH Logic voltage high –40°C to +125°C 1.3 44 V
VIL Logic voltage low –40°C to +125°C 0 0.8 V
IIH Input leakage current –40°C to +125°C 0.005 2 µA
IIL Input leakage current –40°C to +125°C –1 –0.005 µA
CIN Logic input capacitance –40°C to +125°C 3 pF
POWER SUPPLY
IDD VDD supply current VDD = 22 V, VSS = –22 V
Logic inputs = 0 V, 5 V, or VDD		 25°C 34 44 µA
–40°C to +85°C 50 µA
–40°C to +125°C 65 µA
ISS VSS supply current VDD = 22 V, VSS = –22 V
Logic inputs = 0 V, 5 V, or VDD		 25°C 4 9 µA
–40°C to +85°C 12 µA
–40°C to +125°C 25 µA
(1) When VS is positive, VD is negative, or when VS is negative, VD is positive.
(2) When VS is at a voltage potential, VD is floating, or when VD is at a voltage potential, VS is floating.

5.9 ±20 V Dual Supply: Switching Characteristics

VDD = +20 V ± 10%, VSS = –20 V ±10%, GND = 0 V (unless otherwise noted) 
Typical at VDD = +20 V, VSS = –20 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
tTRAN Transition time from control input VS = 10 V
RL = 300 Ω, CL = 35 pF
Refer to Transition Time		 25°C 110 175 ns
–40°C to +85°C 190 ns
–40°C to +125°C 205 ns
tON (EN) Turn-on time from enable VS = 10 V
RL = 300 Ω, CL = 35 pF
Refer to Turn-on and Turn-off Time		 25°C 110 170 ns
–40°C to +85°C 185 ns
–40°C to +125°C 200 ns
tOFF (EN) Turn-off time from enable VS = 10 V
RL = 300 Ω, CL = 35 pF
Refer to Turn-on and Turn-off Time		 25°C 90 180 ns
–40°C to +85°C 190 ns
–40°C to +125°C 200 ns
tBBM Break-before-make time delay VS = 10 V,
RL = 300 Ω, CL = 35 pF
Refer to Break-Before-Make		 25°C 55 ns
–40°C to +85°C 1 ns
–40°C to +125°C 1 ns
TON (VDD) Device turn on time
(VDD to output)		 VDD rise time = 100ns 
RL = 300 Ω, CL = 35 pF
Refer to Turn-on (VDD) Time		 25°C 0.18 ms
–40°C to +85°C 0.2 ms
–40°C to +125°C 0.2 ms
tPD Propagation delay RL = 50 Ω , CL = 5 pF
Refer to Propagation Delay		 25°C 715 ps
QINJ Charge injection VD = 0 V, CL = 1 nF
Refer to Charge Injection		 25°C –15 pC
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 100 kHz
Refer to Off Isolation		 25°C –75 dB
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1 MHz
Refer to Off Isolation		 25°C –55 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 100 kHz
Refer to Crosstalk		 25°C –117 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1MHz
Refer to Crosstalk		 25°C –106 dB
BW –3dB Bandwidth RL = 50 Ω , CL = 5 pF
VS = 0 V,
Refer to Bandwidth		 25°C 38 MHz
IL Insertion loss RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1 MHz		 25°C –0.16 dB
ACPSRR AC Power Supply Rejection Ratio VPP = 0.62 V on VDD and VSS
RL = 50 Ω , CL = 5 pF,
f = 1 MHz
Refer to ACPSRR		 25°C –63 dB
THD+N Total Harmonic Distortion + Noise VPP = 20 V, VBIAS = 0 V
RL  =  10 kΩ , CL = 5 pF,
f = 20 Hz to 20 kHz
Refer to THD + Noise		 25°C 0.0005 %
CS(OFF) Source off capacitance VS = 0 V, f = 1 MHz 25°C 32 pF
CD(OFF) Drain off capacitance VS = 0 V, f = 1 MHz 25°C 45 pF
CS(ON),
CD(ON)		 On capacitance VS = 0 V, f = 1 MHz 25°C 146 pF

5.10 44 V Single Supply: Electrical Characteristics 

VDD = +44 V, VSS = 0 V, GND = 0 V (unless otherwise noted) 
Typical at VDD = +44 V, VSS = 0 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to 40 V
ID = –10 mA
Refer to On-Resistance		 25°C 2.2 2.8 Ω
–40°C to +85°C 3.6 Ω
–40°C to +125°C 4.2 Ω
ΔRON On-resistance mismatch between channels VS = 0 V to 40 V
ID = –10 mA
Refer to On-Resistance		 25°C 0.1 0.2 Ω
–40°C to +85°C 0.3 Ω
–40°C to +125°C 0.35 Ω
RON FLAT On-resistance flatness VS = 0 V to 40 V
ID = –10 mA
Refer to On-Resistance		 25°C 0.2 1 Ω
–40°C to +85°C 1.3 Ω
–40°C to +125°C 1.5 Ω
RON DRIFT On-resistance drift VS = 22 V, IS = –10 mA
Refer to On-Resistance		 –40°C to +125°C 0.008 Ω/°C
IS(OFF) Source off leakage current(1) VDD = 44 V, VSS = 0 V
Switch state is off
VS = 40 V / 1 V
VD = 1 V / 40 V
Refer to Off-Leakage Current		 25°C –5 0.05 5 nA
–40°C to +85°C –10 10 nA
–40°C to +125°C –35 35 nA
ID(OFF) Drain off leakage current(1) VDD = 44 V, VSS = 0 V
Switch state is off
VS = 40 V / 1 V
VD = 1 V / 40 V
Refer to Off-Leakage Current		 25°C –8 0.05 8 nA
–40°C to +85°C –12 12 nA
–40°C to +125°C –70 70 nA
IS(ON)
ID(ON)		 Channel on leakage current(2) VDD = 44 V, VSS = 0 V
Switch state is on
VS = VD = 40 V or 1 V
Refer to On-Leakage Current		 25°C –8 0.05 8 nA
–40°C to +85°C –10 10 nA
–40°C to +125°C –45 45 nA
LOGIC INPUTS (SEL / EN pins)
VIH Logic voltage high –40°C to +125°C 1.3 44 V
VIL Logic voltage low –40°C to +125°C 0 0.8 V
IIH Input leakage current –40°C to +125°C 0.005 2 µA
IIL Input leakage current –40°C to +125°C –1 –0.005 µA
CIN Logic input capacitance –40°C to +125°C 3 pF
POWER SUPPLY
IDD VDD supply current VDD = 44 V, VSS = 0 V
Logic inputs = 0 V, 5 V, or VDD		 25°C 17 50 µA
–40°C to +85°C 60 µA
–40°C to +125°C   75 µA
(1) When VS is 40V, VD is 1V, or when VS is 1V, VD is 40V.
(2) When VS is at a voltage potential, VD is floating, or when VD is at a voltage potential, VS is floating.

5.11 44 V Single Supply: Switching Characteristics 

VDD = +44 V, VSS = 0 V, GND = 0 V (unless otherwise noted) 
Typical at VDD = +44 V, VSS = 0 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
tTRAN Transition time from control input VS = 18 V
RL = 300 Ω, CL = 35 pF
Refer to Transition Time		 25°C 120 175 ns
–40°C to +85°C 190 ns
–40°C to +125°C 205 ns
tON (EN) Turn-on time from enable VS = 18 V
RL = 300 Ω, CL = 35 pF
Refer to Turn-on and Turn-off Time		 25°C 120 168 ns
–40°C to +85°C 185 ns
–40°C to +125°C 195 ns
tOFF (EN) Turn-off time from enable VS = 18 V
RL = 300 Ω, CL = 35 pF
Refer to Turn-on and Turn-off Time		 25°C 120 180 ns
–40°C to +85°C 200 ns
–40°C to +125°C 205 ns
tBBM Break-before-make time delay VS = 18 V,
RL = 300 Ω, CL = 35 pF
Refer to Break-Before-Make		 25°C 45 ns
–40°C to +85°C 1 ns
–40°C to +125°C 1 ns
TON (VDD) Device turn on time
(VDD to output)		 VDD rise time = 1µs 
RL = 300 Ω, CL = 35 pF
Refer to Turn-on (VDD) Time		 25°C 0.15 ms
–40°C to +85°C 0.17 ms
–40°C to +125°C 0.17 ms
tPD Propagation delay RL = 50 Ω , CL = 5 pF
Refer to Propagation Delay		 25°C 930 ps
QINJ Charge injection VD = 22 V, CL = 1 nF
Refer to Charge Injection		 25°C –16 pC
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 100 kHz
Refer to Off Isolation		 25°C –75 dB
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 1 MHz
Refer to Off Isolation		 25°C –55 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 100 kHz
Refer to Crosstalk		 25°C –117 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 1MHz
Refer to Crosstalk		 25°C –106 dB
BW –3dB Bandwidth RL = 50 Ω , CL = 5 pF
VS = 6 V
Refer to Bandwidth		 25°C 37 MHz
IL Insertion loss RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 1 MHz		 25°C –0.18 dB
ACPSRR AC Power Supply Rejection Ratio VPP = 0.62 V on VDD and VSS
RL = 50 Ω , CL = 5 pF,
f = 1 MHz
Refer to ACPSRR		 25°C –60 dB
THD+N Total Harmonic Distortion + Noise VPP = 22 V, VBIAS = 22 V
RL  =  10 kΩ , CL = 5 pF,
f = 20 Hz to 20 kHz
Refer to THD + Noise		 25°C 0.0004 %
CS(OFF) Source off capacitance VS = 6 V, f = 1 MHz 25°C 34 pF
CD(OFF) Drain off capacitance VS = 6 V, f = 1 MHz 25°C 48 pF
CS(ON),
CD(ON)		 On capacitance VS = 6 V, f = 1 MHz 25°C 146 pF

 
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