ZHCSLK6B July   2021  – February 2025 TPS1HC100-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
    1. 4.1 Recommended Connections for Unused Pins
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 SNS Timing Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Accurate Current Sense
      2. 7.3.2 Programmable Current Limit
        1. 7.3.2.1 Capacitive Charging
      3. 7.3.3 Inductive-Load Switching-Off Clamp
      4. 7.3.4 Full Protections and Diagnostics
        1. 7.3.4.1  Short-Circuit and Overload Protection
        2. 7.3.4.2  Open-Load and Short-to-Battery Detection
        3. 7.3.4.3  Short-to-Battery Detection
        4. 7.3.4.4  Reverse-Polarity and Battery Protection
        5. 7.3.4.5  Latch-Off Mode
        6. 7.3.4.6  Thermal Protection Behavior
        7. 7.3.4.7  UVLO Protection
        8. 7.3.4.8  Loss of GND Protection
        9. 7.3.4.9  Loss of Power Supply Protection
        10. 7.3.4.10 Reverse Current Protection
        11. 7.3.4.11 Protection for MCU I/Os
      5. 7.3.5 Diagnostic Enable Function
    4. 7.4 Device Functional Modes
      1. 7.4.1 Working Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Dynamically Changing Current Limit
        2. 8.2.2.2 AEC Q100-012 Test Grade A Certification
        3. 8.2.2.3 EMC Transient Disturbances Test
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Without a GND Network
        2. 8.4.2.2 With a GND Network
      3. 8.4.3 Thermal Considerations
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.8 Typical Characteristics

All the following data are based on the mean value of the three lots samples, VVBB = 13.5 V if not specified.

TPS1HC100-Q1 Transient Thermal Impedance
Figure 5-1 Transient Thermal Impedance
TPS1HC100-Q1 Output Leakage Current IOUT,STBY vs Temperature
VOUT = 0 V VEN = 0 V VDIAG_EN = 0 V
VBB Varied
Figure 5-3 Output Leakage Current IOUT,STBY vs Temperature
TPS1HC100-Q1 Diagnostic Current IDIA vs Temperature
IOUT = 0 A VEN = 0 V VDIAG_EN = 5 V
VBB Varied
Figure 5-5 Diagnostic Current IDIA vs Temperature
TPS1HC100-Q1 RDSON vs VBB
IOUT = 1 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 5-7 RDSON vs VBB
TPS1HC100-Q1 KCL vs Temperature
ROUT = 5μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V
Figure 5-9 KCL vs Temperature
TPS1HC100-Q1 KSNS Error vs VBB
IOUT = 1A VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 5-11 KSNS Error vs VBB
TPS1HC100-Q1 VSNSFH (5 V) vs VBB
ROUT = 5μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 5-13 VSNSFH (5 V) vs VBB
TPS1HC100-Q1 Turn off time TOFF vs Temperature
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 5-15 Turn off time TOFF vs Temperature
TPS1HC100-Q1 Falling Slew Rate SRF vs Temperature
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 5-17 Falling Slew Rate SRF vs Temperature
TPS1HC100-Q1 VIL vs Temperature
ROUT = 1 kΩ VEN = 3.3 to 0 V VDIAG_EN = 3.3 to 0 V
VBB varied RSNS = 1 kΩ
Figure 5-19 VIL vs Temperature
TPS1HC100-Q1 Turn-off Time (tOFF)
ROUT = 10 Ω VEN = 5 to 0 V VDIAG_EN = 0 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 5-21 Turn-off Time (tOFF)
TPS1HC100-Q1 Short Circuit With ILIM Shorted to Ground
ROUT = 5 μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ RILIM = GND
Figure 5-23 Short Circuit With ILIM Shorted to Ground
TPS1HC100-Q1 470-μF Capacitive Load Driving
ROUT = 470 μF and 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ RILIM = open
Figure 5-25 470-μF Capacitive Load Driving
TPS1HC100-Q1 Standby Current ISB vs. Temperature
VOUT = 0 V VEN = 0 V VDIAG_EN = 0 V
VBB Varied
Figure 5-2 Standby Current ISB vs. Temperature
TPS1HC100-Q1 Quiescent Current IQ vs Temperature
IOUT = 0 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 5-4 Quiescent Current IQ vs Temperature
TPS1HC100-Q1 RDSON vs Temperature
IOUT = 1 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 5-6 RDSON vs Temperature
TPS1HC100-Q1 RONREV vs Temperature
IOUT = 1 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 5-8 RONREV vs Temperature
TPS1HC100-Q1 KSNS Error vs Temperature
ROUT varied VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 5-10 KSNS Error vs Temperature
TPS1HC100-Q1 VSNSFH (3.3 V) vs VBB
ROUT = 5μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 5-12 VSNSFH (3.3 V) vs VBB
TPS1HC100-Q1 Turn on time TON vs Temperature
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 5-14 Turn on time TON vs Temperature
TPS1HC100-Q1 Rising Slew Rate SRR vs Temperature
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 5-16 Rising Slew Rate SRR vs Temperature
TPS1HC100-Q1 VIH vs Temperature
ROUT = 1 kΩ VEN = 0 to 3.3 V VDIAG_EN = 0 to 3.3 V
VBB varied RSNS = 1 kΩ
Figure 5-18 VIH vs Temperature
TPS1HC100-Q1 Turn-on Time (tON)
ROUT = 10 Ω VEN = 0 to 5 V VDIAG_EN = 0 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 5-20 Turn-on Time (tON)
TPS1HC100-Q1 ISNS Settling Time (tSNSION) on Load Step
IOUT = 500 mA to 3 A VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 5-22 ISNS Settling Time (tSNSION) on Load Step
TPS1HC100-Q1 5mH Inductive Load Driving
ROUT = 5 mH VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ RILIM = GND
Figure 5-24 5mH Inductive Load Driving