ZHCSK40E
August 2019 – August 2024
OPA810
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Device Comparison Table
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics: 10 V
6.6
Electrical Characteristics: 24 V
6.7
Electrical Characteristics: 5 V
6.8
Typical Characteristics: VS = 10 V
6.9
Typical Characteristics: VS = 24 V
6.10
Typical Characteristics: VS = 5 V
6.11
Typical Characteristics: ±2.375-V to ±12-V Split Supply
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
OPA810 Architecture
7.3.2
ESD Protection
7.4
Device Functional Modes
7.4.1
Split-Supply Operation (±2.375 V to ±13.5 V)
7.4.2
Single-Supply Operation (4.75 V to 27 V)
8
Application and Implementation
8.1
Application Information
8.1.1
Amplifier Gain Configurations
8.1.2
Selection of Feedback Resistors
8.1.3
Noise Analysis and the Effect of Resistor Elements on Total Noise
8.2
Typical Applications
8.2.1
Transimpedance Amplifier
8.2.1.1
Design Requirements
8.2.1.2
Detailed Design Procedure
8.2.1.3
Application Curves
8.2.2
High-Z Input Data Acquisition Front-End
8.2.3
Multichannel Sensor Interface
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.1.1
Thermal Considerations
8.4.2
Layout Example
9
Device and Documentation Support
9.1
第三方产品免责声明
9.2
Documentation Support
9.2.1
Related Documentation
9.3
接收文档更新通知
9.4
支持资源
9.5
Trademarks
9.6
静电放电警告
9.7
术语表
10
Revision History
11
Mechanical, Packaging, and Orderable Information
9.6
静电放电警告
静电放电 (ESD) 会损坏这个集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。