ZHCSJ60D November   2018  – December 2019 TPS1HA08-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 SNS Timing Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1 Device Nomenclature
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Selectable Current Limit Threshold
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB during Short-to-Ground
        3. 9.3.1.3 Energy Limit
        4. 9.3.1.4 Voltage Transients
          1. 9.3.1.4.1 Load Dump
          2. 9.3.1.4.2 Driving Inductive and Capacitive Loads
        5. 9.3.1.5 Reverse Battery
        6. 9.3.1.6 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 ST Pin
        4. 9.3.2.4 Fault Indication and SNS Mux
        5. 9.3.2.5 Resistor Sharing
        6. 9.3.2.6 High-Frequency, Low Duty-Cycle Current Sensing
      3. 9.3.3 Enable Watchdog
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 Diagnostics
          1. 10.2.2.2.1 Selecting the RISNS Value
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 相关文档
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 Glossary
  14. 14机械、封装和可订购信息

10.1.1 Ground Protection Network

As discussed in the section regarding Reverse Battery, DGND may be used to prevent excessive reverse current from flowing into the device during a reverse battery event. Additionally, RGND is placed in parallel with DGND if the switch is used to drive an inductive load. The ground protection network (DGND and RGND) may be shared amongst multiple high-side switches.

A minimum value for RGND may be calculated by using the absolute maximum rating for IGND. During the reverse battery condition, IGND = VBB / RGND:

Equation 1. RGND ≥ VBB / IGND

where

  • Set VBB = –13.5 V
  • Set IGND = –50 mA (absolute maximum rating)

In this example, it is found that RGND must be at least 270 Ω. It is also necessary to consider the power dissipation in RGND during the reverse battery event:

Equation 2. PRGND = VBB2 / RGND

PRGND = (13.5 V)2 / 270 Ω = 0.675 W

In practice, RGND may not be rated for such a high power. In this case, a larger resistor value should be selected.