CSD25501F3 –20V P 沟道 FemtoFET™ MOSFET
- ZHCSGW6C October 2017 – June 2024 CSD25501F3
  
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CSD25501F3 –20V P 沟道 FemtoFET^™ MOSFET

本资源的原文使用英文撰写。为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

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1 特性

低导通电阻
超低 Q_g 和 Q_gd
超小尺寸
- 0.7mm × 0.6mm
薄型封装
- 最大厚度为 0.22mm
集成型 ESD 保护二极管
无铅且无卤素
符合 RoHS

2 应用

针对负载开关应用进行了优化
电池应用
手持式和移动类应用

3 说明

此 –20V、64mΩ P 沟道 FemtoFET™ MOSFET 经过设计和优化，能够更大限度地减小在许多手持式和移动应用中占用的空间。这项技术能够在替代标准小信号 MOSFET 的同时大幅减小封装尺寸。集成的 10kΩ 钳位电阻器 (R_C) 可根据占空比让栅极电压 (V_GS) 高于最大内部栅极氧化值 –6V。通过二极管的栅极泄漏 (I_GSS) 随着 V_GS 增加到高于 –6V 而增加。

产品概要

T_A = 25°C		典型值		单位
V_DS	漏源电压	-20		V
Q_g	栅极电荷总量 (-4.5V)	1.02		nC
Q_gd	栅极电荷（栅极到漏极）	0.09		nC
R_DS(on)	漏源导通电阻	V_GS = -1.8V	120	mΩ
		V_GS = -2.5V	86
		V_GS = -4.5V	64
V_GS(th)	阈值电压	-0.75		V

器件信息

器件⁽¹⁾	数量	介质	封装	运输
CSD25501F3	3000	7 英寸卷带	Femto 0.73mm × 0.64mm 基板栅格阵列 (LGA)	卷带包装
CSD25501F3T	250	7 英寸卷带	Femto 0.73mm × 0.64mm 基板栅格阵列 (LGA)	卷带包装

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。

绝对最大额定值

T_A = 25°C（除非另外注明）		值	单位
V_DS	漏源电压	-20	V
V_GS	栅源电压	-20	V
I_D	持续漏极电流⁽¹⁾	-3.6	A
I_DM	脉冲漏极电流⁽¹⁾⁽²⁾	-13.6	A
P_D	功率耗散⁽¹⁾	500	mW
V_(ESD)	人体放电模型 (HBM)	4000	V
V_(ESD)	充电器件模型 (CDM)	2000	V
T_J、 T_stg	工作结温，贮存温度	-55 至 150	°C

(1) 安装在覆铜区域最小的 FR4 电路板上时的典型 R_θJA = 255°C/W。

(2) 脉冲持续时间 ≤100μs，占空比 ≤1%。

典型器件尺寸

顶视图

4 Specifications

4.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_DS = –250μA	–20			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = –16V			–50	nA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = –6V			–50	nA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = –16V			–1	mA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = –250μA	–0.45	–0.75	–1.05	V
R_DS(on)	Drain-to-source on-resistance	V_GS = –1.8V, I_DS = –0.1A		120	260	mΩ
		V_GS = –2.5V, I_DS = –0.4A		86	125
		V_GS = –4.5V, I_DS = –0.4A		64	76
g_fs	Transconductance	V_DS = –2V, I_DS = –0.4A		3.4		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = –10V, ƒ = 100kHz		295	385	pF
C_oss	Output capacitance			70	91	pF
C_rss	Reverse transfer capacitance			4.1	5.3	pF
R_G	Series gate resistance			33		Ω
R_C	Series clamp resistance			10,000		Ω
Q_g	Gate charge total (–4.5 V)	V_DS = –10V, I_DS = –0.4A		1.02	1.33	nC
Q_gd	Gate charge gate-to-drain			0.09		nC
Q_gs	Gate charge gate-to-source			0.45		nC
Q_g(th)	Gate charge at V_th			0.36		nC
Q_oss	Output charge	V_DS = –10V, V_GS = 0V		1.8		nC
t_d(on)	Turnon delay time	V_DS = –10V, V_GS = –4.5V, I_DS = –0.4A, R_G = 0Ω		474		ns
t_r	Rise time			428		ns
t_d(off)	Turnoff delay time			1154		ns
t_f	Fall time			945		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = –0.4A, V_GS = 0V		–0.73	–0.95	V
Q_rr	Reverse recovery charge	V_DS = –10V, I_F = –0.4A, di/dt = 200A/μs		3.0		nC
t_rr	Reverse recovery time	V_DS = –10V, I_F = –0.4A, di/dt = 200A/μs		7.4		ns

4.2 Thermal Information

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		TYPICAL VALUES			UNIT
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾		90		°C/W
R_θJA	Junction-to-ambient thermal resistance⁽²⁾		255		°C/W

(1) Device mounted on FR4 material with 1in² (6.45cm²), 2oz (0.071mm) thick Cu.

(2) Device mounted on FR4 material with minimum Cu mounting area.

4.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

	I_D = –0.4A	V_DS = –10V

Figure 4-4 Gate Charge

CSD25501F3 Threshold Voltage vs Temperature

	I_D = –250µA

Figure 4-6 Threshold Voltage vs Temperature

CSD25501F3 Normalized On-State Resistance vs Temperature

	I_D = –0.4A

Figure 4-8 Normalized On-State Resistance vs Temperature

	Single pulse, typical R_θJA = 255°C/W

Figure 4-10 Maximum Safe Operating Area

	V_DS = –5V

Figure 4-3 Transfer Characteristics

Figure 4-5 Capacitance

CSD25501F3 On-State Resistance vs Gate-to-Source Voltage

Figure 4-7 On-State Resistance vs Gate-to-Source Voltage

CSD25501F3 Typical Diode Forward Voltage

Figure 4-9 Typical Diode Forward Voltage

CSD25501F3 Maximum Drain Current vs Temperature

	Typical R_θJA = 90°C/W

Figure 4-11 Maximum Drain Current vs Temperature