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此 –20V、64mΩ P 沟道 FemtoFET™ MOSFET 经过设计和优化,能够更大限度地减小在许多手持式和移动应用中占用的空间。这项技术能够在替代标准小信号 MOSFET 的同时大幅减小封装尺寸。集成的 10kΩ 钳位电阻器 (RC) 可根据占空比让栅极电压 (VGS) 高于最大内部栅极氧化值 –6V。通过二极管的栅极泄漏 (IGSS) 随着 VGS 增加到高于 –6V 而增加。
TA = 25°C | 典型值 | 单位 | ||
---|---|---|---|---|
VDS | 漏源电压 | -20 | V | |
Qg | 栅极电荷总量 (-4.5V) | 1.02 | nC | |
Qgd | 栅极电荷(栅极到漏极) | 0.09 | nC | |
RDS(on) | 漏源 导通电阻 |
VGS = -1.8V | 120 | mΩ |
VGS = -2.5V | 86 | |||
VGS = -4.5V | 64 | |||
VGS(th) | 阈值电压 | -0.75 | V |
器件(1) | 数量 | 介质 | 封装 | 运输 |
---|---|---|---|---|
CSD25501F3 | 3000 | 7 英寸卷带 | Femto 0.73mm × 0.64mm 基板栅格阵列 (LGA) |
卷带 包装 |
CSD25501F3T | 250 |
TA = 25°C(除非另外注明) | 值 | 单位 | |
---|---|---|---|
VDS | 漏源电压 | -20 | V |
VGS | 栅源电压 | -20 | V |
ID | 持续漏极电流(1) | -3.6 | A |
IDM | 脉冲漏极电流(1)(2) | -13.6 | A |
PD | 功率耗散(1) | 500 | mW |
V(ESD) | 人体放电模型 (HBM) | 4000 | V |
充电器件模型 (CDM) | 2000 | ||
TJ、 Tstg |
工作结温, 贮存温度 |
-55 至 150 | °C |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0V, IDS = –250μA | –20 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0V, VDS = –16V | –50 | nA | |||
IGSS | Gate-to-source leakage current | VDS = 0V, VGS = –6V | –50 | nA | |||
VDS = 0V, VGS = –16V | –1 | mA | |||||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = –250μA | –0.45 | –0.75 | –1.05 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = –1.8V, IDS = –0.1A | 120 | 260 | mΩ | ||
VGS = –2.5V, IDS = –0.4A | 86 | 125 | |||||
VGS = –4.5V, IDS = –0.4A | 64 | 76 | |||||
gfs | Transconductance | VDS = –2V, IDS = –0.4A | 3.4 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS =
0V, VDS = –10V, ƒ = 100kHz | 295 | 385 | pF | ||
Coss | Output capacitance | 70 | 91 | pF | |||
Crss | Reverse transfer capacitance | 4.1 | 5.3 | pF | |||
RG | Series gate resistance | 33 | Ω | ||||
RC | Series clamp resistance | 10,000 | Ω | ||||
Qg | Gate charge total (–4.5 V) | VDS = –10V, IDS = –0.4A | 1.02 | 1.33 | nC | ||
Qgd | Gate charge gate-to-drain | 0.09 | nC | ||||
Qgs | Gate charge gate-to-source | 0.45 | nC | ||||
Qg(th) | Gate charge at Vth | 0.36 | nC | ||||
Qoss | Output charge | VDS = –10V, VGS = 0V | 1.8 | nC | |||
td(on) | Turnon delay time | VDS =
–10V, VGS = –4.5V, IDS = –0.4A, RG = 0Ω | 474 | ns | |||
tr | Rise time | 428 | ns | ||||
td(off) | Turnoff delay time | 1154 | ns | ||||
tf | Fall time | 945 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = –0.4A, VGS = 0V | –0.73 | –0.95 | V | ||
Qrr | Reverse recovery charge | VDS = –10V, IF = –0.4A, di/dt = 200A/μs | 3.0 | nC | |||
trr | Reverse recovery time | 7.4 | ns |
THERMAL METRIC | TYPICAL VALUES | UNIT | |||
---|---|---|---|---|---|
RθJA | Junction-to-ambient thermal resistance(1) | 90 | °C/W | ||
Junction-to-ambient thermal resistance(2) | 255 | °C/W |
TA = 25°C (unless otherwise stated)
ID = –0.4A | VDS = –10V | ||
ID = –250µA | ||
ID = –0.4A | ||
Single pulse, typical RθJA = 255°C/W | ||
VDS = –5V | ||
Typical RθJA = 90°C/W | ||