• Menu
  • Product
  • Email
  • PDF
  • Order now
  • CSD25501F3 –20V P 沟道 FemtoFET™ MOSFET

    • ZHCSGW6C October   2017  – June 2024 CSD25501F3

      PRODUCTION DATA  

  • CONTENTS
  • SEARCH
  • CSD25501F3 –20V P 沟道 FemtoFET™ MOSFET
  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 接收文档更新通知
    2. 5.2 支持资源
    3. 5.3 Trademarks
    4. 5.4 静电放电警告
    5. 5.5 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information
  9. 重要声明
search No matches found.
  • Full reading width
    • Full reading width
    • Comfortable reading width
    • Expanded reading width
  • Card for each section
  • Card with all content

 

Data Sheet

CSD25501F3 –20V P 沟道 FemtoFET™ MOSFET

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

下载最新的英语版本

1 特性

  • 低导通电阻
  • 超低 Qg 和 Qgd
  • 超小尺寸
    • 0.7mm × 0.6mm
  • 薄型封装
    • 最大厚度为 0.22mm
  • 集成型 ESD 保护二极管
  • 无铅且无卤素
  • 符合 RoHS

2 应用

  • 针对负载开关应用进行了优化
  • 电池应用
  • 手持式和移动类应用

3 说明

此 –20V、64mΩ P 沟道 FemtoFET™ MOSFET 经过设计和优化,能够更大限度地减小在许多手持式和移动应用中占用的空间。这项技术能够在替代标准小信号 MOSFET 的同时大幅减小封装尺寸。集成的 10kΩ 钳位电阻器 (RC) 可根据占空比让栅极电压 (VGS) 高于最大内部栅极氧化值 –6V。通过二极管的栅极泄漏 (IGSS) 随着 VGS 增加到高于 –6V 而增加。

产品概要
TA = 25°C 典型值 单位
VDS 漏源电压 -20 V
Qg 栅极电荷总量 (-4.5V) 1.02 nC
Qgd 栅极电荷(栅极到漏极) 0.09 nC
RDS(on) 漏源
导通电阻
VGS = -1.8V 120 mΩ
VGS = -2.5V 86
VGS = -4.5V 64
VGS(th) 阈值电压 -0.75 V
器件信息
器件(1) 数量 介质 封装 运输
CSD25501F3 3000 7 英寸卷带 Femto
0.73mm × 0.64mm
基板栅格阵列 (LGA)
卷带
包装
CSD25501F3T 250
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附录。
绝对最大额定值
TA = 25°C(除非另外注明) 值 单位
VDS 漏源电压 -20 V
VGS 栅源电压 -20 V
ID 持续漏极电流(1) -3.6 A
IDM 脉冲漏极电流(1)(2) -13.6 A
PD 功率耗散(1) 500 mW
V(ESD) 人体放电模型 (HBM) 4000 V
充电器件模型 (CDM) 2000
TJ、
Tstg
工作结温,
贮存温度
-55 至 150 °C
(1) 安装在覆铜区域最小的 FR4 电路板上时的典型 RθJA = 255°C/W。
(2) 脉冲持续时间 ≤100μs,占空比 ≤1%。

CSD25501F3 典型器件尺寸...............典型器件尺寸
CSD25501F3 顶视图......... 顶视图

4 Specifications

4.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0V, IDS = –250μA–20V
IDSSDrain-to-source leakage currentVGS = 0V, VDS = –16V–50nA
IGSSGate-to-source leakage currentVDS = 0V, VGS = –6V–50nA
VDS = 0V, VGS = –16V–1mA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = –250μA–0.45–0.75–1.05V
RDS(on)Drain-to-source on-resistanceVGS = –1.8V, IDS = –0.1A120260mΩ
VGS = –2.5V, IDS = –0.4A86125
VGS = –4.5V, IDS = –0.4A6476
gfsTransconductanceVDS = –2V, IDS = –0.4A3.4S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0V, VDS = –10V,
ƒ = 100kHz
295385pF
CossOutput capacitance7091pF
CrssReverse transfer capacitance4.15.3pF
RGSeries gate resistance33Ω
RCSeries clamp resistance10,000Ω
QgGate charge total (–4.5 V)VDS = –10V, IDS = –0.4A1.021.33nC
QgdGate charge gate-to-drain0.09nC
QgsGate charge gate-to-source0.45nC
Qg(th)Gate charge at Vth0.36nC
QossOutput chargeVDS = –10V, VGS = 0V1.8nC
td(on)Turnon delay timeVDS = –10V, VGS = –4.5V,
IDS = –0.4A, RG = 0Ω
474ns
trRise time428ns
td(off)Turnoff delay time1154ns
tfFall time945ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = –0.4A, VGS = 0V–0.73–0.95V
QrrReverse recovery chargeVDS = –10V, IF = –0.4A, di/dt = 200A/μs3.0nC
trrReverse recovery time7.4ns

4.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRICTYPICAL VALUESUNIT
RθJAJunction-to-ambient thermal resistance(1)90°C/W
Junction-to-ambient thermal resistance(2)255°C/W
(1) Device mounted on FR4 material with 1in2 (6.45cm2), 2oz (0.071mm) thick Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

CSD25501F3 Transient Thermal Impedance Figure 4-1 Transient Thermal Impedance
CSD25501F3 Saturation CharacteristicsFigure 4-2 Saturation Characteristics
CSD25501F3 Gate
                        Charge
ID = –0.4A VDS = –10V
Figure 4-4 Gate Charge
CSD25501F3 Threshold Voltage vs Temperature
ID = –250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD25501F3 Normalized On-State Resistance vs Temperature
ID = –0.4A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD25501F3 Maximum Safe Operating Area
Single pulse, typical RθJA = 255°C/W
Figure 4-10 Maximum Safe Operating Area
CSD25501F3 Transfer Characteristics
VDS = –5V
Figure 4-3 Transfer Characteristics
CSD25501F3 CapacitanceFigure 4-5 Capacitance
CSD25501F3 On-State Resistance vs Gate-to-Source VoltageFigure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD25501F3 Typical Diode Forward VoltageFigure 4-9 Typical Diode Forward Voltage
CSD25501F3 Maximum Drain Current vs Temperature
Typical RθJA = 90°C/W
Figure 4-11 Maximum Drain Current vs Temperature

 

Texas Instruments

© Copyright 1995-2025 Texas Instruments Incorporated. All rights reserved.
Submit documentation feedback | IMPORTANT NOTICE | Trademarks | Privacy policy | Cookie policy | Terms of use | Terms of sale