ZHCSG01D February 2017 – March 2022 DRV8320 , DRV8320R , DRV8323 , DRV8323R
PRODUCTION DATA
图 8-41 展示了栅极驱动 LS 寄存器,表 8-17 对其进行了说明。
寄存器访问类型:读取/写入
| 10 | 9 | 8 | 7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
| CBC | TDRIVE | IDRIVEP_LS | IDRIVEN_LS | |||||||
| R/W-1b | R/W-11b | R/W-1111b | R/W-1111b | |||||||
| 位 | 字段 | 类型 | 默认值 | 说明 |
|---|---|---|---|---|
| 10 | CBC | R/W | 1b | 逐周期操作。在重试 OCP_MODE 时,对于 VDS_OCP 和 SEN_OCP,会在提供 PWM 输入时自动清除故障 |
| 9-8 | TDRIVE | R/W | 11b | 00b = 500ns 峰值栅极电流驱动时间 01b = 1000ns 峰值栅极电流驱动时间 10b = 2000ns 峰值栅极电流驱动时间 11b = 4000ns 峰值栅极电流驱动时间 |
| 7-4 | IDRIVEP_LS | R/W | 1111b | 0000b = 10mA 0001b = 30mA 0010b = 60mA 0011b = 80mA 0100b = 120mA 0101b = 140mA 0110b = 170mA 0111b = 190mA 1000b = 260mA 1001b = 330mA 1010b = 370mA 1011b = 440mA 1100b = 570mA 1101b = 680mA 1110b = 820mA 1111b = 1000mA |
| 3-0 | IDRIVEN_LS | R/W | 1111b | 0000b = 20mA 0001b = 60mA 0010b = 120mA 0011b = 160mA 0100b = 240mA 0101b = 280mA 0110b = 340mA 0111b = 380mA 1000b = 520mA 1001b = 660mA 1010b = 740mA 1011b = 880mA 1100b = 1140mA 1101b = 1360mA 1110b = 1640mA 1111b = 2000mA |