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  • MSP430FR263x、MSP430FR253x 电容式触控感应混合信号微控制器

    • ZHCSET6E November   2015  – December 2019 MSP430FR2532 , MSP430FR2533 , MSP430FR2632 , MSP430FR2633

      PRODUCTION DATA.  

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  • MSP430FR263x、MSP430FR253x 电容式触控感应混合信号微控制器
  1. 1器件概述
    1. 1.1 特性
    2. 1.2 应用
    3. 1.3 说明
    4. 1.4 功能框图
  2. 2修订历史记录
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagrams
    2. 4.2 Pin Attributes
    3. 4.3 Signal Descriptions
    4. 4.4 Pin Multiplexing
    5. 4.5 Buffer Types
    6. 4.6 Connection of Unused Pins
  5. 5Specifications
    1. 5.1       Absolute Maximum Ratings
    2. 5.2       ESD Ratings
    3. 5.3       Recommended Operating Conditions
    4. 5.4       Active Mode Supply Current Into VCC Excluding External Current
    5. 5.5       Active Mode Supply Current Per MHz
    6. 5.6       Low-Power Mode LPM0 Supply Currents Into VCC Excluding External Current
    7. 5.7       Low-Power Mode (LPM3 and LPM4) Supply Currents (Into VCC) Excluding External Current
    8. 5.8       Low-Power Mode LPMx.5 Supply Currents (Into VCC) Excluding External Current
    9. 5.9       Typical Characteristics - Low-Power Mode Supply Currents
    10. Table 5-1 Typical Characteristics – Current Consumption Per Module
    11. 5.10      Thermal Resistance Characteristics
    12. 5.11      Timing and Switching Characteristics
      1. 5.11.1  Power Supply Sequencing
        1. Table 5-2 PMM, SVS and BOR
      2. 5.11.2  Reset Timing
        1. Table 5-3 Wake-up Times From Low-Power Modes and Reset
      3. 5.11.3  Clock Specifications
        1. Table 5-4 XT1 Crystal Oscillator (Low Frequency)
        2. Table 5-5 DCO FLL, Frequency
        3. Table 5-6 DCO Frequency
        4. Table 5-7 REFO
        5. Table 5-8 Internal Very-Low-Power Low-Frequency Oscillator (VLO)
        6. Table 5-9 Module Oscillator (MODOSC)
      4. 5.11.4  Digital I/Os
        1. Table 5-10 Digital Inputs
        2. Table 5-11 Digital Outputs
        3. 5.11.4.1   Typical Characteristics – Outputs at 3 V and 2 V
      5. 5.11.5  VREF+ Built-in Reference
        1. Table 5-12 VREF+
      6. 5.11.6  Timer_A
        1. Table 5-13 Timer_A
      7. 5.11.7  eUSCI
        1. Table 5-14 eUSCI (UART Mode) Clock Frequency
        2. Table 5-15 eUSCI (UART Mode)
        3. Table 5-16 eUSCI (SPI Master Mode) Clock Frequency
        4. Table 5-17 eUSCI (SPI Master Mode)
        5. Table 5-18 eUSCI (SPI Slave Mode)
        6. Table 5-19 eUSCI (I2C Mode)
      8. 5.11.8  ADC
        1. Table 5-20 ADC, Power Supply and Input Range Conditions
        2. Table 5-21 ADC, 10-Bit Timing Parameters
        3. Table 5-22 ADC, 10-Bit Linearity Parameters
      9. 5.11.9  CapTIvate
        1. Table 5-23 CapTIvate Electrical Characteristics
        2. Table 5-24 CapTIvate Signal-to-Noise Ratio Characteristics
      10. 5.11.10 FRAM
        1. Table 5-25 FRAM
      11. 5.11.11 Debug and Emulation
        1. Table 5-26 JTAG, Spy-Bi-Wire Interface
        2. Table 5-27 JTAG, 4-Wire Interface
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  CPU
    3. 6.3  Operating Modes
    4. 6.4  Interrupt Vector Addresses
    5. 6.5  Bootloader (BSL)
    6. 6.6  JTAG Standard Interface
    7. 6.7  Spy-Bi-Wire Interface (SBW)
    8. 6.8  FRAM
    9. 6.9  Memory Protection
    10. 6.10 Peripherals
      1. 6.10.1  Power-Management Module (PMM)
      2. 6.10.2  Clock System (CS) and Clock Distribution
      3. 6.10.3  General-Purpose Input/Output Port (I/O)
      4. 6.10.4  Watchdog Timer (WDT)
      5. 6.10.5  System (SYS) Module
      6. 6.10.6  Cyclic Redundancy Check (CRC)
      7. 6.10.7  Enhanced Universal Serial Communication Interface (eUSCI_A0, eUSCI_B0)
      8. 6.10.8  Timers (Timer0_A3, Timer1_A3, Timer2_A2 and Timer3_A2)
      9. 6.10.9  Hardware Multiplier (MPY)
      10. 6.10.10 Backup Memory (BAKMEM)
      11. 6.10.11 Real-Time Clock (RTC)
      12. 6.10.12 10-Bit Analog-to-Digital Converter (ADC)
      13. 6.10.13 CapTIvate Technology
      14. 6.10.14 Embedded Emulation Module (EEM)
    11. 6.11 Input/Output Diagrams
      1. 6.11.1 Port P1 Input/Output With Schmitt Trigger
      2. 6.11.2 Port P2 (P2.0 to P2.2) Input/Output With Schmitt Trigger
      3. 6.11.3 Port P2 (P2.3 to P2.7) Input/Output With Schmitt Trigger
      4. 6.11.4 Port P3 (P3.0 to P3.2) Input/Output With Schmitt Trigger
    12. 6.12 Device Descriptors
    13. 6.13 Memory
      1. 6.13.1 Memory Organization
      2. 6.13.2 Peripheral File Map
    14. 6.14 Identification
      1. 6.14.1 Revision Identification
      2. 6.14.2 Device Identification
      3. 6.14.3 JTAG Identification
  7. 7Applications, Implementation, and Layout
    1. 7.1 Device Connection and Layout Fundamentals
      1. 7.1.1 Power Supply Decoupling and Bulk Capacitors
      2. 7.1.2 External Oscillator
      3. 7.1.3 JTAG
      4. 7.1.4 Reset
      5. 7.1.5 Unused Pins
      6. 7.1.6 General Layout Recommendations
      7. 7.1.7 Do's and Don'ts
    2. 7.2 Peripheral- and Interface-Specific Design Information
      1. 7.2.1 ADC Peripheral
        1. 7.2.1.1 Partial Schematic
        2. 7.2.1.2 Design Requirements
        3. 7.2.1.3 Layout Guidelines
      2. 7.2.2 CapTIvate Peripheral
        1. 7.2.2.1 Device Connection and Layout Fundamentals
        2. 7.2.2.2 Measurements
          1. 7.2.2.2.1 SNR
          2. 7.2.2.2.2 Sensitivity
          3. 7.2.2.2.3 Power
    3. 7.3 CapTIvate Technology Evaluation
  8. 8器件和文档支持
    1. 8.1  入门和后续步骤
    2. 8.2  器件命名规则
    3. 8.3  工具和软件
    4. 8.4  文档支持
    5. 8.5  相关链接
    6. 8.6  社区资源
    7. 8.7  商标
    8. 8.8  静电放电警告
    9. 8.9  Export Control Notice
    10. 8.10 Glossary
  9. 9机械、封装和可订购信息
  10. 重要声明
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DATA SHEET

MSP430FR263x、MSP430FR253x 电容式触控感应混合信号微控制器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 器件概述

1.1 特性

  • CapTIvate ™技术 – 电容式触控
    • 性能
      • 四路同步快速电极扫描
      • 支持点数高达 1024 的高分辨率滑块
      • 接近感应
    • 可靠性
      • 提高了针对电力线、射频及其他环境噪声的抗扰度
      • 内置扩展频谱、自动调优、噪声滤除和消抖算法
      • 提供可靠的触控解决方案,具有 10V RMS 共模噪声、4kV 电气快速瞬变以及 15kV 静电放电,符合 IEC‑61000-4-6、IEC‑61000-4-4 和 IEC‑61000-4-2 标准
      • 降低了射频辐射,简化了电气设计
      • 支持金属触控和防水设计
    • 灵活性
      • 多达 16 个自电容式电极和 64 个互电容式电极
      • 在同一设计中混合使用自电容式电极和互电容式电极
      • 支持多点触控功能
      • 宽电容检测范围;0 至 300pF 宽电极范围
    • 低功耗
      • 四个传感器的触摸唤醒电流小于 5µA
      • 触摸唤醒状态机支持在 CPU 休眠过程中进行电极扫描
      • 用于环境补偿、滤波和阈值检测的硬件加速
    • 易于使用
      • CapTIvate 设计中心 PC GUI 允许工程师对电容按钮进行实时设计和调试,无需编写代码
      • 存储于 ROM 中的 CapTIvate 软件库为客户应用提供充足的 FRAM
  • 嵌入式微控制器
    • 16 位 RISC 架构
    • 支持的时钟频率最高可达 16MHz
    • 3.6V 至 1.8V 的宽电源电压范围(最低电源电压受限于 SVS 电平,请参阅 SVS 规格)
  • 优化的超低功耗模式
    • 激活模式:126µA/MHz(典型值)
    • 待机模式:四个传感器的触摸唤醒电流小于 5µA
    • 采用 32768Hz 晶振的 LPM3.5 实时时钟 (RTC) 计数器:730nA(典型值)
    • 关断电流 (LPM4.5):16nA(典型值)
  • 高性能模拟
    • 8 通道 10 位模数转换器 (ADC)
      • 1.5V 的内部基准电压
      • 采样与保持 200ksps
  • 增强型串行通信
    • 两个增强型通用串行通信接口 (eUSCI_A) 支持 UART、IrDA 和 SPI
    • 一个 eUSCI (eUSCI_B) 支持 SPI 和 I2C
  • 智能数字外设
    • 四个 16 位计时器
      • 两个计时器,每个计时器具有三个捕捉/比较寄存器 (Timer_A3)
      • 两个计时器,每个计时器具有两个捕捉/比较寄存器 (Timer_A2)
    • 一个采用 CapTIvate 技术的 16 位计时器
    • 一个仅用作计数器的 16 位 RTC
    • 16 位循环冗余校验 (CRC)
  • 低功耗铁电 RAM (FRAM)
    • 容量高达 15.5KB 的非易失性存储器
    • 内置错误修正码 (ECC)
    • 可配置的写保护
    • 对程序、常量和存储的统一存储
    • 耐写次数达 1015 次
    • 抗辐射和非磁性
    • FRAM 与 SRAM 之比高达 4:1
  • 时钟系统 (CS)
    • 片上 32kHz RC 振荡器 (REFO)
    • 带有锁频环 (FLL) 的片上 16MHz 数控振荡器 (DCO)
      • 室温下的精度为 ±1%(具有片上基准)
    • 片上超低频 10kHz 振荡器 (VLO)
    • 片上高频调制振荡器 (MODOSC)
    • 外部 32kHz 晶振 (LFXT)
    • 可编程 MCLK 预分频器(1 至 128)
    • 通过可编程预分频器(1、2、4 或 8)从 MCLK 获得的 SMCLK
  • 通用输入/输出和引脚功能
    • 共计 19 个 I/O(采用 TSSOP-32 封装)
    • 16 个中断引脚(P1 和 P2)可以将 MCU 从低功耗模式下唤醒
  • 开发工具和软件
    • 开发工具
      • MSP CapTIvate™ MCU 开发套件评估:与 CAPTIVATE-PGMR 编程器和电容式触控 MSP430FR2633 MCU 板 CAPTIVATE‑FR2633 配合使用
      • 目标开发板 (MSP‑TS430RGE24A)
    • 易于使用的生态系统
      • CapTIvate 设计中心 – 代码生成、可自定义 GUI、实时调优
  • 系列成员(另请参阅器件比较)
    • MSP430FR2633:15KB 程序 FRAM、512 字节信息 FRAM、4KB RAM、多达 16 个自电容式传感器或 64 个互电容式传感器
    • MSP430FR2533:15KB 程序 FRAM、512 字节信息 FRAM、2KB RAM、多达 16 个自电容式传感器或 24 个互电容式传感器
    • MSP430FR2632:8KB 程序 FRAM、512 字节信息 FRAM、2KB RAM、多达 8 个自电容式传感器或 16 个互电容式传感器
    • MSP430FR2532:8KB 程序 FRAM、512 字节信息 FRAM、1KB RAM、多达 8 个自电容式传感器或 8 个互电容式传感器
  • 封装选项
    • 32 引脚:VQFN (RHB)
    • 32 引脚:TSSOP (DA)
    • 24 引脚:VQFN (RGE)
    • 24 引脚:DSBGA (YQW)

1.2 应用

  • 电子智能锁、门键盘和读取器
  • 车库门系统
  • 入侵 HMI 键盘和控制面板
  • 电动百叶窗
  • 遥控器
  • 个人电子产品
  • 无线扬声器和耳机
  • 手持式视频游戏控制器
  • A/V 接收器
  • 白色家电
  • 小型电器
  • 园艺和电动工具

1.3 说明

MSP430FR263x 和 MSP430FR253x 是用于电容式触控检测的超低功耗 MSP430™ 微控制器,采用 CapTIvate™ 触控技术,适用于按钮、滑块、滚轮及接近传感 应用中的数字输入 D 类音频放大器。采用 CapTIvate 技术的 MSP430 MCU 提供市面上最高集成度和自主性的电容式触控解决方案,具有高可靠性和抗噪能力以及最低功耗。TI 的电容式触控技术支持在同一设计方案中同时使用自电容式和互电容式电极,最大限度地提高了灵活性。采用 CapTIvate 技术的 MSP430 MCU 可以穿透厚玻璃、塑料外壳、金属和木材,在恶劣的环境(包括潮湿、油腻和脏污环境)中工作。

TI 电容式触控感应 MSP430 MCU 由一个由各种软、硬件资源组成的生态系统提供支持,并配套提供有参考设计和代码示例,可帮助您快速开展设计。开发套件包括 MSP-CAPT-FR2633 CapTIvate 技术开发套件。TI 还提供免费的软件,如 CapTIvate 设计中心,工程师可以在其中 借助 方便易用的 GUI 和 MSP430Ware™ 软件以及包括 CapTIvate 技术指南在内的综合性文档快速进行应用开发。

TI 的 MSP430 超低功耗 (ULP) FRAM 微控制器平台将独特的嵌入式 FRAM 和全面的超低功耗系统架构相结合,从而使系统设计人员能够在降低能耗的同时提升性能。FRAM 技术将 RAM 的低能耗快速写入、灵活性和耐用性与闪存的非易失性相结合。

有关完整的模块说明,请参阅《MSP430FR4xx 和 MSP430FR2xx 系列器件用户指南》。

器件信息(1)

器件型号 封装 封装尺寸(2)
MSP430FR2633IRHB VQFN (32) 5mm x 5mm
MSP430FR2533IRHB VQFN (32) 5mm × 5mm
MSP430FR2633IDA TSSOP (32) 11mm × 6.2mm
MSP430FR2533IDA TSSOP (32) 11mm × 6.2mm
MSP430FR2632IRGE 超薄四方扁平无引线 (VQFN) (24) 4mm x 4mm
MSP430FR2532IRGE 超薄四方扁平无引线 (VQFN) (24) 4mm x 4mm
MSP430FR2633IYQW DSBGA (24) 2.29mm × 2.34mm
MSP430FR2632IYQW DSBGA (24) 2.29mm × 2.34mm
(1) 要获得最新的产品、封装和订购信息,请参见封装选项附录(Section 9),或者访问德州仪器 (TI) 网站 www.ti.com.cn。
(2) 这里显示的尺寸为近似值。要获得包含误差值的封装尺寸,请参见机械数据(Section 9中)。

CAUTION

系统级静电放电 (ESD) 保护必须符合器件级 ESD 规范,以防发生电气过载或对数据或代码存储器造成干扰。有关更多信息,请参阅《MSP430 系统级 ESD 注意事项》。

1.4 功能框图

Figure 1-1 给出了功能框图。

MSP430FR2633 MSP430FR2632 MSP430FR2533 MSP430FR2532 SLAS942_Functional_Block_Diagram.gifFigure 1-1 功能框图
  • MCU 的主电源对 DVCC 和 DVSS 分别为数字模块和模拟模块供电。推荐的旁路电容和去耦电容分别为 4.7μF 至 10μF 和 0.1μF,精度为 ±5%。
  • VREG 是 CapTIvate 稳压器的去耦电容。所需去耦电容的建议值为 1µF,最大等效串联电阻 (ESR) ≤ 200mΩ。
  • P1 和 P2 特有引脚中断功能,可将 MCU 从所有低功耗模式 (LPM) 唤醒(包括 LPM3.5 和 LPM4)。
  • 每个 Timer_A3 具有三个捕捉/比较寄存器。仅 CCR1 和 CCR2 从外部连接。CCR0 寄存器仅用于内部周期时序和生成中断。
  • 每个 Timer_A2 具有两个捕捉/比较寄存器。两个寄存器仅用于内部周期时序和生成中断。
  • 在 LPM3 模式下,CapTIvate 可在其他外设停止工作的情况下继续工作。

2 修订历史记录

从修订版本 D 更改为修订版本 E

Changes from August 20, 2019 to December 9, 2019

  • Changed the note that begins "Supply voltage changes faster than 0.2 V/µs can trigger a BOR reset..." in Section 5.3, Recommended Operating ConditionsGo
  • Added the note that begins "TI recommends that power to the DVCC pin must not exceed the limits..." in Section 5.3, Recommended Operating ConditionsGo
  • Changed the note that begins "A capacitor tolerance of ±20% or better is required..." in Section 5.3, Recommended Operating ConditionsGo
  • Changed the note that begins "Requires external capacitors at both terminals..." in Table 5-4, XT1 Crystal Oscillator (Low Frequency)Go
  • Added the t(int) parameter in Table 5-10, Digital InputsGo
  • Corrected the test conditions for the RI,MUX parameter in Table 5-20, ADC, Power Supply and Input Range ConditionsGo
  • Added the note that begins "tSample = ln(2n+1) × τ ..." in Table 5-21, ADC, 10-Bit Timing ParametersGo
  • Changed the CRC covered end address to 0x1AF5 in note (1) in Table 6-22, Device DescriptorsGo

Changes from August 29, 2018 to August 19, 2019

  • 更新了Section 1.1特性Go
  • 在 Section 1.1,特性 中添加了“目标开发板”信息Go
  • Changed "fCONVER = 2 MHz" to "fCONVER = 4 MHz" in the note that begins "CapTIvate technology works in LPM3 with 64 mutual-capacitance buttons" on Section 5.7, Low-Power Mode (LPM3 and LPM4) Supply Currents (Into VCC) Excluding External CurrentGo
  • Changed the parameter symbol from RI to RI,MUX in Table 5-20 , ADC, Power Supply and Input Range ConditionsGo
  • Added RI,Misc TYP value of 34 kΩ in Table 5-20 , ADC, Power Supply and Input Range ConditionsGo
  • Added formula for RI calculation in Table 5-21 , ADC, 10-Bit Timing ParametersGo
  • Removed the description of "±3°C" in table note that starts "The device descriptor structure ..." of Table 5-22, ADC, 10-Bit Linearity ParametersGo
  • Added test condition for CELECTRODE in Table 5-23 , CapTIvate Electrical CharacteristicsGo
  • Changed the symbol and description of the DCCAPCLK parameter in Table 5-23, CapTIvate Electrical CharacteristicsGo
  • Moved the SNR parameter to Table 5-24, CapTIvate Signal-to-Noise Ratio CharacteristicsGo
  • Corrected bitfield from IRDSEL to IRDSSEL in Section 6.10.8, Timers (Timer0_A3, Timer1_A3, Timer2_A2 and Timer3_A2), in the description that starts "The interconnection of Timer0_A3 and ..."Go
  • Corrected the ADCINCHx column heading in Table 6-15, ADC Channel ConnectionsGo
  • Corrected the ADCSHSx column heading in Table 6-16, ADC Trigger Signal ConnectionsGo
  • Added P1SELC information in Table 6-32, Port P1, P2 Registers (Base Address: 0200h)Go
  • Added P2SELC information in Table 6-32, Port P1, P2 Registers (Base Address: 0200h)Go
  • Added P3SELC information in Table 6-33, Port P3 Registers (Base Address: 0220h)Go
  • Updated Section 7.2.2, CapTIvate PeripheralGo

Changes from June 9, 2017 to August 28, 2018

  • 删除了Section 1.1,特性 中“接近感应”项的“30cm”Go
  • Updated Section 3.1, Related ProductsGo
  • Corrected package type in VQFN row (changed from QFN to VQFN) in Table 4-2, Signal DescriptionsGo
  • Changed HBM limit to ±1000 V and CDM limit to ±250 V in Section 5.2, ESD RatingsGo
  • Added note to VSVSH- and VSVSH+ parameters in Table 5-2, PMM, SVS and BORGo
  • Added the SNR parameter in Table 5-23, CapTIvate Electrical CharacteristicsGo
  • Moved "FRAM access time error" to "System Reset" row and added ACCTEIFG to interrupt flag column in Table 6-2, Interrupt Sources, Flags, and VectorsGo
  • Corrected the offset for P2SEL1 in Table 6-32, Port P1, P2 Registers (Base Address: 0200h)Go
  • 更新了Section 8.2器件命名规则 中的文本和图Go

Changes from December 10, 2015 to June 8, 2017

  • 更改了 “特性” 列表的组织结构Go
  • 在Section 1.1,特性 中的“封装选项”列表中添加了 DSBGA (YQW) 封装Go
  • 更新了Section 1.2,应用 中的列表Go
  • 更新Section 1.3,说明Go
  • 在器件信息 表(位于Section 1.3“说明”中)中添加了 DSBGA (YQW) 封装选项Go
  • Added MSP430FR2633IYQW and MSP430FR2632IYQW to Table 3-1, Device ComparisonGo
  • Added Section 3.1, Related ProductsGo
  • Added DSBGA (YQW) pinoutGo
  • Added DSBGA (YQW) package to Table 4-1, Pin AttributesGo
  • Added DSBGA (YQW) package to Table 4-2, Signal DescriptionsGo
  • Added row for VQFN thermal pad in Table 4-2, Signal DescriptionsGo
  • Removed FRAM reflow noteGo
  • Updated the notes on ILPM3, CapTIvate, 16 buttons and ILPM3, CapTIvate, 64 buttons in Section 5.7, Low-Power Mode (LPM3 and LPM4) Supply Currents (Into VCC) Excluding External CurrentGo
  • Added DSBGA (YQW) package and changed notes for Section 5.10, Thermal Resistance CharacteristicsGo
  • Removed ADCDIV from the formula for the TYP value in the second row of the tCONVERT parameter in Table 5-21, ADC, 10-Bit Timing Parameters (removed because ADCCLK is after division)Go
  • Add description of blank device detectionGo
  • Changed the paragraph that starts "Quickly switching digital signals and ..." in Section 7.2.1.2, Design RequirementsGo
  • 更新了Figure 8-1,器件命名规则Go
  • 将先前的开发工具支持 部分替换为Section 8.3“工具和软件”Go
  • 更新了Section 8.4“文档支持”的格式和内容Go

Changes from November 6, 2015 to December 9, 2015

  • 将文档状态从“产品预览”更改为“生产数据”Go
  • 更改了开头为“提供可靠的触控解决方案...”的列表项Go
  • 向开头为“宽电源电压范围...”的列表项添加了说明Go
  • In the note that starts "Low-power mode 3, VLO, excludes SVS test conditions...", changed "fXT1 = 0 Hz" to "fXT1 = 32768 Hz"Go
  • Added note that starts "The VLO clock frequency is reduced by 15%..."Go
  • Added note to "Clock" in Table 6-1, Operating ModesGo
  • Added note that starts "XT1CLK and VLOCLK can be active during LPM4..."Go
  • Corrected description in Section 6.10.10, Backup Memory (BKMEM)Go

3 Device Comparison

Table 3-1 summarizes the features of the available family members.

Table 3-1 Device Comparison(1)(2)

DEVICE PROGRAM FRAM + INFORMATION FRAM (BYTES) SRAM (BYTES) TA0 TO TA3 eUSCI_A eUSCI_B 10-BIT ADC CHANNELS CapTIvate™ CHANNELS GPIOs PACKAGE TYPE
UART SPI
MSP430FR2633IRHB 15360 + 512 4096 2, 3 × CCR(3)
2, 2 × CCR
up to 2 up to 2 1 8 16(4) 19 32 RHB (VQFN)
MSP430FR2533IRHB 15360 + 512 2048 2, 3 × CCR(3)
2, 2 × CCR
up to 2 up to 2 1 8 16(4) 19 32 RHB (VQFN)
MSP430FR2633IDA 15360 + 512 4096 2, 3 × CCR(3)
2, 2 × CCR
up to 2 up to 2 1 8 16(4) 19 32 DA (TSSOP)
MSP430FR2533IDA 15360 + 512 2048 2, 3 × CCR(3)
2, 2 × CCR
up to 2 up to 2 1 8 16(4) 19 32 DA (TSSOP)
MSP430FR2632IRGE 8192 + 512 2048 2, 3 × CCR(3)
2, 2 × CCR
up to 2 1 1 8 8(5) 15 24 RGE (VQFN)
MSP430FR2532IRGE 8192 + 512 1024 2, 3 × CCR(3)
2, 2 × CCR
up to 2 1 1 8 8(5) 15 24 RGE (VQFN)
MSP430FR2633IYQW 15360 + 512 4096 2, 3 × CCR(3)
2, 2 × CCR
up to 2 1 1 8 8(6) 17 24 YQW (DSBGA)
MSP430FR2632IYQW 8192 + 512 2048 2, 3 × CCR(3)
2, 2 × CCR
up to 2 1 1 8 8(6) 17 24 YQW (DSBGA)
(1) For the most current package and ordering information, see the Package Option Addendum in Section 9, or see the TI website at www.ti.com
(2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/packaging
(3) A CCR register is a configurable register that provides internal and external capture or compare inputs, or internal and external PWM outputs.
(4) Eight dedicated CapTIvate channels are included.
(5) Four dedicated CapTIvate channels are included.
(6) Two dedicated CapTIvate channels are included.

3.1 Related Products

For information about other devices in this family of products or related products, see the following links.

TI 16-bit and 32-bit microcontrollers

High-performance, low-power solutions to enable the autonomous future

Products for MSP430 ultra-low-power sensing & measurement MCUs

One platform. One ecosystem. Endless possibilities.

Companion products for MSP430FR2633

Review products that are frequently purchased or used with this product.

Reference designs for MSP430FR2633

Find reference designs leveraging the best in TI technology – from analog and power management to embedded processors

 

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