ZHCSD84A January   2015  – December 2024 CSD19534KCS

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 第三方产品免责声明
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 接收文档更新通知
    4. 5.4 支持资源
    5. 5.5 Trademarks
    6. 5.6 静电放电警告
    7. 5.7 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD19534KCS Transient Thermal ImpedanceFigure 4-1 Transient Thermal Impedance
CSD19534KCS Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19534KCS Gate Charge
ID = 30AVDS = 50V
Figure 4-4 Gate Charge
CSD19534KCS Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD19534KCS Normalized On-State Resistance vs Temperature
ID = 30A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19534KCS Maximum Safe Operating Area
Single Pulse, Max RθJC = 1.3°C/W
Figure 4-10 Maximum Safe Operating Area
CSD19534KCS Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19534KCS Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD19534KCS Capacitance
Figure 4-5 Capacitance
CSD19534KCS On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD19534KCS Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19534KCS Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching