ZHCSC18C January   2014  – May 2024 CSD19536KCS

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 接收文档更新通知
    2. 5.2 支持资源
    3. 5.3 Trademarks
    4. 5.4 静电放电警告
    5. 5.5 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD19536KCS Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD19536KCS Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19536KCS Transfer Characteristics
Figure 4-3 Transfer Characteristics
CSD19536KCS Gate Charge
Figure 4-4 Gate Charge
CSD19536KCS Threshold Voltage vs Temperature
Figure 4-6 Threshold Voltage vs Temperature
CSD19536KCS Normalized On-State Resistance vs Temperature
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19536KCS Maximum Safe Operating Area
Figure 4-10 Maximum Safe Operating Area
CSD19536KCS Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19536KCS Capacitance
Figure 4-5 Capacitance
CSD19536KCS On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD19536KCS Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19536KCS Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching