ZHCSAI3F
May 2012 – August 2024
TPS65131-Q1
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Device Comparison
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Power Conversion
7.3.2
Control
7.3.3
Output Rails Enable or Disable
7.3.4
Load Disconnect
7.3.5
Soft Start
7.3.6
Overvoltage Protection
7.3.7
Undervoltage Lockout
7.3.8
Overtemperature Shutdown
7.4
Device Functional Modes
7.4.1
Power-Save Mode
8
Application and Implementation
8.1
Application Information
8.2
Typical Applications
8.2.1
TPS65131-Q1 With VPOS = 10.5V, VNEG = –10V
8.2.2
Design Requirements
8.2.3
Detailed Design Procedure
8.2.3.1
Programming the Output Voltage
8.2.3.1.1
Boost Converter
8.2.3.1.2
Inverting Converter
8.2.3.1.3
Inductor Selection
8.2.3.2
Capacitor Selection
8.2.3.2.1
Input Capacitor
8.2.3.2.2
Output Capacitors
8.2.3.3
Rectifier Diode Selection
8.2.3.4
External P-MOSFET Selection
8.2.3.5
Stabilizing the Control Loop
8.2.3.5.1
Feedforward Capacitors
8.2.3.5.2
Compensation Capacitors
8.2.4
Analog Supply Input Filter
8.2.4.1
RC-Filter
8.2.4.2
LC-Filter
8.2.5
Thermal Information
8.2.6
Application Curves
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Layout Example
9
器件和文档支持
9.1
接收文档更新通知
9.2
支持资源
9.3
商标
9.4
静电放电警告
9.5
术语表
10
Revision History
11
Mechanical, Packaging, and Orderable Information
11.1
Mechanical Data
11.2
Tape and Reel Information
6.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002
(1)
±1000
V
Charged device model (CDM), per AEC Q100-011
±750
V
(1)
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.