ZHCS253A September   2011  – July 2015 TPS61170-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 典型应用
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Soft Start-up
      2. 8.3.2 Overcurrent Protection
      3. 8.3.3 Undervoltage Lockout
      4. 8.3.4 Thermal Shutdown
      5. 8.3.5 Enable and Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 PWM Program Mode
      2. 8.4.2 1-Wire Program Mode
      3. 8.4.3 EasyScale
    5. 8.5 Programming
      1. 8.5.1 Feedback Reference Program Mode Selection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 12-V to 24-V DC-DC Power Conversion
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Program Output Voltage
          2. 9.2.1.2.2 Maximum Output Current
          3. 9.2.1.2.3 Switch Duty Cycle
          4. 9.2.1.2.4 Inductor Selection
          5. 9.2.1.2.5 Schottky Diode Selection
          6. 9.2.1.2.6 Compensation Capacitor Selection
          7. 9.2.1.2.7 Input and Output Capacitor Selection
        3. 9.2.1.3 Application Curve
      2. 9.2.2 5-V to 12-V DC-DC Power Conversion With Programmable Feedback Reference Voltage
      3. 9.2.3 12-V SEPIC (Buck-Boost) Converter
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 文档支持
      1. 12.2.1 相关文档　
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VI Supply voltages on VIN (2) –0.3 20 V
Voltages on CTRL(2) –0.3 20
Voltage on FB and COMP(2) –0.3 3
Voltage on SW(2) –0.3 40
PD Continuous power dissipation See Thermal Information
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins Corner pins (FB, GND, VIN, and SW) ±750
Other pins ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VI Input voltage range, VIN 3 18 V
VO Output voltage range VIN 38 V
L Inductor(1) 10 22 μH
CI Input capacitor 1 μF
CO Output capacitor(1) 1 10 μF
TA Operating ambient temperature –40 125 °C
TJ Operating junction temperature –40 125 °C
(1) These values are recommended values that have been successfully tested in several applications. Other values may be acceptable in other applications but should be fully tested by the user.

7.4 Thermal Information

THERMAL METRIC(1) TPS61170-Q1 UNIT
DRV (SON)
6 PINS
RθJA Junction-to-ambient thermal resistance 96.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 89 °C/W
RθJB Junction-to-board thermal resistance 65.9 °C/W
ψJT Junction-to-top characterization parameter 3.2 °C/W
ψJB Junction-to-board characterization parameter 66.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 40.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VIN = 3.6 V, CTRL = VIN, TA = –40°C to 125°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage range, VIN 3.0 18 V
IQ Operating quiescent current into VIN Device PWM switching no load 2.3 mA
ISD Shutdown current CRTL = GND, VIN = 4.2 V 1 μA
UVLO Undervoltage lockout threshold VIN falling 2.2 2.5 V
Vhys Undervoltage lockout Hysteresis 70 mV
ENABLE AND REFERENCE CONTROL
V(CTRLh) CTRL logic high voltage VIN = 3 V to 18 V 1.2 V
V(CTRL) CTRL logic low voltage VIN = 3 V to 18 V 0.4 V
R(CTRL) CTRL pulldown resistor 400 800 1600 kΩ
VOLTAGE AND CURRENT CONTROL
VREF Voltage feedback regulation voltage 1.204 1.229 1.254 V
V(REF_PWM) Voltage feedback regulation voltage under reprogram VFB = 492 mV 477 492 507 mV
IFB Voltage feedback input bias current VFB = 1.229 V 200 nA
Dmax Maximum duty cycle VFB = 100 mV 90% 93%
Isink Comp pin sink current 100 μA
Isource Comp pin source current 100 μA
Gea Error amplifier transconductance 240 320 400 μmho
Rea Error amplifier output resistance 5 pF connected to COMP 6 MΩ
POWER SWITCH
RDS(on) N-channel MOSFET ON-resistance VIN = 3.6 V 0.3 0.6 Ω
VIN = 3.0 V 0.7
ILN_NFET N-channel leakage current VSW = 35 V, TA = 25°C 1 μA
OC AND SS
ILIM N-channel MOSFET current limit D = Dmax 0.96 1.2 1.44 A
ILIM_Start Start-up current limit D = Dmax 0.7 A
EasyScale TIMING
VACKNL Acknowledge output voltage low Open-drain, Rpullup =15 kΩ to Vin 0.4 V
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
Thysteresis Thermal shutdown threshold hysteresis 15 °C
(1) Acknowledge condition active 0, this condition will only be applied if the RFA bit is set. Open-drain output, line must be pulled high by the host with resistor load.

7.6 Switching Characteristics

VIN = 3.6 V, CTRL = VIN, TA = –40°C to 125°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ENABLE AND REFERENCE CONTROL
toff EasyScale detection time(1) CTRL high to low 2.5 ms
tes_det EasyScale detection time(1) CTRL pin low 260 μs
tes_delay EasyScale detection delay 100 μs
tes_win EasyScale detection window time 1 ms
VOLTAGE AND CURRENT CONTROL
fS Oscillator frequency 1 1.2 1.5 MHz
tmin_on Minimum on pulse width 40 ns
fea Error amplifier crossover frequency 5 pF connected to COMP 500 kHz
OC AND SS
tHalf_LIM Time step for half current limit 5 ms
tREF Vref filter time constant 180 μs
tstep VREF ramp-up time 213 μs
EasyScale TIMING
tstart Start time of program stream 2 μs
tEOS End time of program stream 2 360 μs
tH_LB High time low bit Logic 0 2 180 μs
tL_LB Low time low bit Logic 0 2 × tH_LB 360 μs
tH_HB High time high bit Logic 1 2 × tL_HB 360 μs
tL_HB Low time high bit Logic 1 2 180 μs
tvalACKN Acknowledge valid time See (1) 2 μs
tACKN Duration of acknowledge condition See (1) 512 μs
(1) EasyScale communication is allowed immediately after the CTRL pin has been low for more than tes_det. To select EasyScale mode, the CTRL pin must be low for more than tes_det the end of tes_win.

7.7 Typical Characteristics

L = TOKO A915_Y-100M, D1 = ONsemi MBR0540T1, unless otherwise noted

Table 1. Table of Graphs

典型应用 FIGURE
Efficiency VIN = 5V; VOUT = 12 V, 18 V, 24 V, 30 V Figure 17
Efficiency VIN = 5 V, 8.5 V, 12 V; VOUT = 24 V Figure 1
Output voltage accuracy ILOAD= 100 mA Figure 2
Switch current limit TA = 25°C Figure 3
Switch current limit Figure 4
Error amplifier transconductance Figure 5
EasyScale step Figure 6
PWM switching operation VIN = 5 V; VOUT = 12 V; ILOAD= 250 mA Figure 7
Load transient response VIN = 5 V; VOUT = 12 V; ILOAD= 50 mA to 150 mA Figure 8
Start-up VIN = 5 V; VOUT = 12 V; ILOAD= 250 mA Figure 9
Skip-cycle switching VIN = 9 V ; VOUT = 12 V, ILOAD= 100 μA Figure 10
TPS61170-Q1 eff2_io_lvs789.gif
Figure 1. Efficiency vs Output Current
TPS61170-Q1 swc_dc_lvs789.gif
Figure 3. Switch Current Limit vs Duty Cycle
TPS61170-Q1 error_ta_lvs789.gif
Figure 5. Error Amplifier Transconductance vs Temperature
TPS61170-Q1 pwm_sw_lvs789.gif
Figure 7. PWM Switching Operation
TPS61170-Q1 startup_lvs789.gif
Figure 9. Start-Up
TPS61170-Q1 vo_vi_lvs789.gif
Figure 2. Output Voltage vs Input Voltage
TPS61170-Q1 swc_ta_lvs789.gif
Figure 4. Switch Current Limit vs Temperature
TPS61170-Q1 fbv_scale_lvs789.gif
Figure 6. FB Voltage vs EasyScale Step
TPS61170-Q1 ld_trans_lvs789.gif
Figure 8. Load Transient Response
TPS61170-Q1 skip_cyc_lvs789.gif
Figure 10. Skip-Cycle Switching