SNOK006 April   2024 TPS7H6013-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Results Summary
    2. 3.2 Data Sheet Electrical Parameters
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: HDR TID Report

1.2 Device Details

Testing was performed per MIL-STD-883, Test Method 1019, with a sample size per MIL-PRF-38535, Appendix C, test condition A (high dose rate).

Table 1-1 Device and Exposure Details
RHA TID Details: Up to 100 krad(Si)
TI Part NumberTPS7H6013-SP
Orderable Number5962R2220102VXC
Device functionHalf Bridge Gate Driver
Die NameRTPS7H6003A0VM
Package48-pin CFP (HBX)
TechnologyLBC7 (250nm Linear BiCMOS)
Quantity testedHDR :
  • Three biased and three unbiased units at 10krad(Si) levels
  • Three biased and three unbiased units at 50krad(Si) levels
  • Five biased and five unbiased units at 100krad(Si) levels
  • One correlation unit
Lot Accept/RejectPasses 100 krad(Si), no observed fails
HDR radiation facilityTexas Instruments CLAB Dallas, Texas
Die Lot Number and Assembly Lot Number2349610TI1-18 / 4000351MTT
HDR Dose Rate186.7 rad(Si) / s
HDR Radiation SourceGammacell 220 Excel (GC-220E) Co-60
Irradiation and Test TemperatureAmbient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750
GUID-20240318-SS0I-PKWN-VMWW-1P0MXGGGVHTK-low.pngFigure 1-1 TPS7H6013-SP Device Used in Exposure