SLVK263 May   2026 TPS7H5030-SP , TPS7H5031-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H503x-SP. Heavy-ions with LETEFF of 75MeV×cm2/mg were used to irradiate 6 devices. Flux of approximately 105ions/cm2/s and fluence of approximately 107ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H503x-SP is SEL-free up to 75MeV×cm2/mg at T = 125°C and SEB/SEGR free up to 75MeV×cm2/mg at T = 25°C. SET transients performance for output pulse-width excursions ≥ |20%| from the nominal pulse-width in an open-loop configuration are discussed.